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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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XP65SL190DIMOSFET N-CH 650V 20A TO220CFM YAGEO XSEMI |
976 | - |
|
数据表 |
XP65SL190D | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 190mOhm @ 6.2A, 10V | Through Hole | 5V @ 250µA | 92.8 nC @ 10 V | 650 V | ±20V | 3312 pF @ 100 V | - | - | TO-220CFM | - | 1.92W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) |
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XP10NA011HMOSFET N-CH 100V 48.5A TO252 YAGEO XSEMI |
1,000 | - |
|
数据表 |
XS10NA011 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 48.5A (Tc) | 6V, 10V | 11mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 56 nC @ 10 V | 100 V | ±20V | 2288 pF @ 80 V | - | - | TO-252 | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
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XP6NA1R4CXTFET N-CH 60V 44.6A 100A PMPAK YAGEO XSEMI |
1,000 | - |
|
数据表 |
XP6NA1R4C | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 44.6A (Ta), 100A (Tc) | 6V, 10V | 1.45mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 195 nC @ 10 V | 60 V | ±20V | 11520 pF @ 50 V | - | - | PMPAK® 5 x 6 | - | 5W (Ta), 113.6W (Tc) | -55°C ~ 150°C (TJ) |
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XP60SL115DRMOSFET N-CH 600V 28A TO262 YAGEO XSEMI |
990 | - |
|
数据表 |
XP60SL115D | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 115mOhm @ 9.6A, 10V | Through Hole | 5V @ 250µA | 145 nC @ 10 V | 600 V | ±20V | 5120 pF @ 100 V | - | - | TO-262 | - | 2W (Ta), 178W (Tc) | -55°C ~ 150°C (TJ) |
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|
XP8NA2R2CXTMOSFET N-CH 80V 35A 168A PMPAK YAGEO XSEMI |
1,000 | - |
|
数据表 |
XP8NA2R2C | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Ta), 168A (Tc) | 6V, 10V | 2.2mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 179 nC @ 10 V | 80 V | ±20V | 9328 pF @ 60 V | - | - | PMPAK® 5 x 6 | - | 5W (Ta), 113.6W (Tc) | -55°C ~ 150°C (TJ) |
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XP8NA1R2TLMOSFET N-CH 80V 300A TOLL YAGEO XSEMI |
994 | - |
|
数据表 |
XP8NA1R2 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300A (Tc) | 10V | 1.2mOhm @ 100A, 10V | Surface Mount | 5V @ 250µA | 424 nC @ 10 V | 80 V | ±20V | 25120 pF @ 60 V | - | - | TOLL | - | 3.75W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
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|
XP10NA1R5TLMOSFET N-CH 100V 300A TOLL YAGEO XSEMI |
987 | - |
|
数据表 |
XP10NA1R5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300A (Tc) | 10V | 1.5mOhm @ 100A, 10V | Surface Mount | 4V @ 250µA | 304 nC @ 10 V | 100 V | ±20V | 16960 pF @ 80 V | - | - | TOLL | - | 3.75W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
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XP10N3R8SMOSFET N CH 100V 132A TO-263 YAGEO XSEMI |
9,580 | - |
|
数据表 |
XP10N3R8 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 132A (Tc) | 10V | 3.88mOhm @ 60A, 10V | Surface Mount | 4V @ 250µA | 136 nC @ 10 V | 100 V | ±20V | 6560 pF @ 80 V | - | - | TO-263 | - | 3.12W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
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|
XP60BM095WLMOSFET N CH 600V 34A TO-247 YAGEO XSEMI |
4,634 | - |
|
数据表 |
XP60BM095 | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 34A (Tc) | 10V | 95mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 114 nC @ 10 V | 600 V | ±20V | 4928 pF @ 400 V | - | - | TO-247 | - | 3.12W (Ta), 208.3W (Tc) | -55°C ~ 150°C (TJ) |
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XP15NA4R4TLMOSFET N CH 150V 191A TOLL YAGEO XSEMI |
6,092 | - |
|
数据表 |
XP15NA4R4 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 167A (Tc) | 10V | 4.4mOhm @ 50A, 10V | Surface Mount | 4V @ 250µA | 254.4 nC @ 10 V | 150 V | ±20V | 11936 pF @ 100 V | - | - | TOLL | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) |
