富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP3NR85CMT

XP3NR85CMT

MOSFET N CH 30V 60A PMPAK5X6

YAGEO XSEMI

6,555 -
XP3NR85CMT

数据表

XP3NR85C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Ta), 100A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 120 nC @ 4.5 V 30 V ±20V 11680 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP10N024H

XP10N024H

MOSFET N CH 100V 25.8A TO-252

YAGEO XSEMI

2,583 -
XP10N024H

数据表

XP10N024 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25.8A (Ta) 5V, 10V 24mOhm @ 12A, 10V Surface Mount 3V @ 250µA 23.2 nC @ 5 V 100 V ±20V 2160 pF @ 50 V - - TO-252 - 2W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP8N3R5CMT

XP8N3R5CMT

MOSFET N CH 80V 28.2A PMPAK5X6

YAGEO XSEMI

3,921 -
XP8N3R5CMT

数据表

XP8N3R5C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28.2A (Ta), 100A (Tc) 10V 3.5mOhm @ 20A, 10V Surface Mount 5V @ 250µA 126 nC @ 10 V 80 V ±20V 7760 pF @ 40 V - - 8-PMPAK (5x6) - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP10NA8R4MT

XP10NA8R4MT

MOSFET N CH 100V 17.8A PMPAK5X6

YAGEO XSEMI

7,619 -
XP10NA8R4MT

数据表

XP10NA8R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.8A (Ta), 66.5A (Tc) 10V 8.4mOhm @ 12A, 10V Surface Mount 4V @ 250µA 68.8 nC @ 10 V 100 V ±20V 3264 pF @ 80 V - - 8-PMPAK (5x6) - 5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
XP60PN72REN

XP60PN72REN

MOSFET N-CH 600V 53MA SOT23

YAGEO XSEMI

2,365 -
XP60PN72REN

数据表

XP60PN72 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53mA (Ta) 10V 72Ohm @ 50mA, 10V Surface Mount 5V @ 250µA 4 nC @ 10 V 600 V ±20V 80 pF @ 100 V - - SOT-23 - 500mW (Ta) -55°C ~ 150°C (TJ)
XP10NA8R2LMT

XP10NA8R2LMT

MOSFET N CH 100V 17.7A PMPAK

YAGEO XSEMI

6,063 -
XP10NA8R2LMT

数据表

XP10NA8R2L 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.7A (Ta), 66A (Tc) 4.5V, 10V 8.2mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 68.8 nC @ 10 V 100 V ±20V 2720 pF @ 80 V - - 8-PMPAK (5x6) - 5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
XP4NAR85CMT

XP4NAR85CMT

MOSFET N CH 40V 61.4A PMPAK5X6

YAGEO XSEMI

7,992 -
XP4NAR85CMT

数据表

XP4NAR85C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 61.4A (Ta), 100A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 192 nC @ 10 V 40 V ±20V 9120 pF @ 30 V - - 8-PMPAK (5x6) - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP10NB6R9CST

XP10NB6R9CST

MOSFET N CH 100V 20A SPPAK5X6

YAGEO XSEMI

8,352 -
XP10NB6R9CST

数据表

XP10NB6R9C SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 100A (Tc) 10V 6.9mOhm @ 30A, 10V Surface Mount 4V @ 250µA 89 nC @ 10 V 100 V ±20V 4768 pF @ 80 V - - SPPAK 5X6 - 6W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ)
XP3N5R0H

XP3N5R0H

MOSFET N-CH 30V 62A TO252

YAGEO XSEMI

998 -
XP3N5R0H

数据表

XP3N5R0 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 62A (Tc) 4.5V, 10V 5mOhm @ 4A, 10V Surface Mount 3V @ 250µA 36 nC @ 4.5 V 30 V ±20V 3200 pF @ 15 V - - TO-252 - 2W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ)
XP4064CMT

XP4064CMT

MOSFET N-CH 30V 31.5A 78A PMPAK

YAGEO XSEMI

1,000 -
XP4064CMT

数据表

XP4064C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31.5A (Ta), 78A (Tc) 4.5V, 10V 3.1mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 40 nC @ 10 V 30 V ±20V 2048 pF @ 25 V - - PMPAK® 5 x 6 - 5W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
共 140 条记录«上一页12345...14下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户