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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP3N5R0YT

XP3N5R0YT

MOSFET N CH 30V 19.5A PMPAK3X3

YAGEO XSEMI

2,502 -
XP3N5R0YT

数据表

XP3N5R0 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19.5A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 35.2 nC @ 4.5 V 30 V ±20V 3040 pF @ 15 V - - 8-PMPAK (3x3) - 3.12W (Ta) -55°C ~ 150°C (TJ)
XP3N5R0MT

XP3N5R0MT

MOSFET N CH 30V 24.7A PMPAK5X6

YAGEO XSEMI

4,073 -
XP3N5R0MT

数据表

XP3N5R0 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24.7A (Ta), 61A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 35.2 nC @ 4.5 V 30 V ±20V 3040 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP4024EYT

XP4024EYT

MOSFET N CH 30V 20.7A PMPAK3X3

YAGEO XSEMI

2,523 -
XP4024EYT

数据表

XP4024 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.7A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 4.5 V 30 V ±20V 2400 pF @ 15 V - - 8-PMPAK (3x3) - 3.12W (Ta) -55°C ~ 150°C (TJ)
XP3NA4R2YT

XP3NA4R2YT

MOSFET N CH 30V 21.5A PMPAK3X3

YAGEO XSEMI

4,187 -
XP3NA4R2YT

数据表

XP3NA4R2 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.5A (Ta), 40A (Tc) 4.5V, 10V 4.2mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 36.8 nC @ 4.5 V 30 V ±20V 3360 pF @ 15 V - - 8-PMPAK (3x3) - 3.12W (Ta) -55°C ~ 150°C (TJ)
XP0504GMT

XP0504GMT

MOSFET N CH 40V 23.6A PMPAK5X6

YAGEO XSEMI

7,836 -
XP0504GMT

数据表

XP0504 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23.6A (Ta), 75A (Tc) 10V 5.5mOhm @ 30A, 10V Surface Mount 3V @ 250µA 32 nC @ 4.5 V 40 V ±20V 2620 pF @ 25 V - - 8-PMPAK (5x6) - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
XP9561GM

XP9561GM

MOSFET P CH -40V 9.4A SO-8

YAGEO XSEMI

5,531 -
XP9561GM

数据表

XP9561 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 18mOhm @ 9A, 10V Surface Mount 3V @ 250µA 42 nC @ 4.5 V 40 V ±20V 2720 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP4N4R2MT

XP4N4R2MT

MOSFET N CH 40V 20.7A PMPAK5X6

YAGEO XSEMI

7,173 -
XP4N4R2MT

数据表

XP4N4R2 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25.8A (Ta), 60A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V Surface Mount 3V @ 250µA 41.6 nC @ 4.5 V 40 V ±20V 4400 pF @ 20 V - - 8-PMPAK (5x6) - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
XP4NA2R2HCST

XP4NA2R2HCST

MOSFET N CH 40V 36.5A SPPAK5X6

YAGEO XSEMI

5,946 -
XP4NA2R2HCST

数据表

AP4NA2R2HC SC-100, SOT-669 Tube Active N-Channel MOSFET (Metal Oxide) 36.5A (Ta), 100A (Tc) 10V 2.28mOhm @ 40A, 10V Surface Mount 4V @ 250µA 80 nC @ 10 V 40 V ±20V 4000 pF @ 30 V - - SPPAK 5X6 - 5W (Ta), 96.1W (Tc) -55°C ~ 150°C (TJ)
XP3N1R7CMT

XP3N1R7CMT

MOSFET N CH 30V 43.3A PMPAK5X6

YAGEO XSEMI

4,484 -
XP3N1R7CMT

数据表

XP3N1R7C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43.3A (Ta), 100A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 54.4 nC @ 4.5 V 30 V +20V, -12V 6720 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
XP10NA8R4H

XP10NA8R4H

MOSFET N CH 100V 66A TO-252

YAGEO XSEMI

7,585 -
XP10NA8R4H

数据表

XP10NA8R4 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 66A (Tc) 10V 8.4mOhm @ 30A, 10V Surface Mount 4V @ 250µA 67.2 nC @ 10 V 100 V ±20V 3248 pF @ 80 V - - TO-252 - 2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
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