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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP6NA8R0CST

XP6NA8R0CST

MOSFET N CH 60V 18.5A SPPAK5X6

YAGEO XSEMI

8,355 -
XP6NA8R0CST

数据表

XP6NA8R0C SC-100, SOT-669 Tube Active N-Channel MOSFET (Metal Oxide) 18.5A (Ta), 69A (Tc) 10V 8mOhm @ 20A, 10V Surface Mount 4V @ 250µA 40 nC @ 10 V 60 V ±20V 1760 pF @ 50 V - - SPPAK 5X6 - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
XP6NA6R3MT

XP6NA6R3MT

MOSFET N CH 60V 21.6A PMPAK5X6

YAGEO XSEMI

2,217 -
XP6NA6R3MT

数据表

XP6NA6R3 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.6A (Ta), 68A (Tc) 6V, 10V 6.3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 60 V ±20V 2960 pF @ 50 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP6NA6R0CMT-L

XP6NA6R0CMT-L

MOSFET N CH 60V 21.7A PMPAK5X6L

YAGEO XSEMI

8,977 -
XP6NA6R0CMT-L

数据表

XP6NA6R0C 8-PowerLDFN Tube Active N-Channel MOSFET (Metal Oxide) 21.7A (Ta), 68A (Tc) 6V, 10V 6mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 56 nC @ 10 V 60 V ±20V 2960 pF @ 50 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP10NA011MT

XP10NA011MT

MOSFET N CH 100V 15.5A PMPAK

YAGEO XSEMI

2,762 -
XP10NA011MT

数据表

XP10NA011 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.5A (Ta), 49A (Tc) 10V 11mOhm @ 20A, 10V Surface Mount 4V @ 250µA 51.2 nC @ 10 V 100 V ±20V 2288 pF @ 80 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP3P010AMT

XP3P010AMT

MOSFET P CH -30V 18.5A PMPAK5X6

YAGEO XSEMI

2,654 -
XP3P010AMT

数据表

XP3P010A 8-PowerLDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 18.5A (Ta), 58A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount 3V @ 250µA 54.4 nC @ 4.5 V 30 V ±20V 6080 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP4NA1R5HCST

XP4NA1R5HCST

MOSFET N CH 40V 45A SPPAK5X6

YAGEO XSEMI

5,819 -
XP4NA1R5HCST

数据表

XP4NA1R5HC SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Ta), 100A (Tc) 10V 1.5mOhm @ 40A, 10V Surface Mount 3.6V @ 250µA 140.8 nC @ 10 V 40 V ±20V 7136 pF @ 30 V - - SPPAK 5X6 - 5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
XP10N011LM

XP10N011LM

MOSFET N CH 100V 11A SO-8

YAGEO XSEMI

6,658 -
XP10N011LM

数据表

XP10N011L 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 5V, 10V 11mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 44.8 nC @ 10 V 100 V ±20V 1920 pF @ 80 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP60SC380DH

XP60SC380DH

MOSFET N CH 600V 10A TO-252

YAGEO XSEMI

4,487 -
XP60SC380DH

数据表

XP60SC380D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 2.8A, 10V Surface Mount 4.5V @ 250µA 28.8 nC @ 10 V 600 V ±20V 1016 pF @ 100 V - - TO-252 - 2W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
XP3P7R0EMT

XP3P7R0EMT

MOSFET P CH -30V 22A PMPAK5X6

YAGEO XSEMI

3,751 -
XP3P7R0EMT

数据表

XP3P7R0E 8-PowerLDFN Tube Active P-Channel MOSFET (Metal Oxide) 22A (Ta), 75A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 54.4 nC @ 4.5 V 30 V ±20V 6880 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
XP10TN010CMT

XP10TN010CMT

MOSFET N CH 100V 17A PMPAK5X6

YAGEO XSEMI

5,640 -
XP10TN010CMT

数据表

XP10TN010C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 49A (Tc) 10V 10mOhm @ 20A, 10V Surface Mount 4V @ 250µA 65.6 nC @ 10 V 100 V ±20V 3440 pF @ 50 V - - 8-PMPAK (5x6) - 5W (Ta), 41.6W (Tc) -55°C ~ 150°C (TJ)
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