Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 86

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRC540PBF MOSFET N-CH 100V 28A TO220-5 Vishay Siliconix	3,826	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	77mOhm @ 17A, 10V	Through Hole	4V @ 250µA	69 nC @ 10 V	100 V	±20V	1300 pF @ 25 V	-	Current Sensing	TO-220-5	-	150W (Tc)	-55°C ~ 175°C (TJ)
SI7635DP-T1-GE3 MOSFET P-CH 20V 40A PPAK SO-8 Vishay Siliconix	5,130	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	4.9mOhm @ 26A, 10V	Surface Mount	2.2V @ 250µA	143 nC @ 10 V	20 V	±16V	4595 pF @ 10 V	-	-	PowerPAK® SO-8	-	5W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)
IRFBE20S MOSFET N-CH 800V 1.8A D2PAK Vishay Siliconix	4,378	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	6.5Ohm @ 1.1A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	800 V	±20V	530 pF @ 25 V	-	-	TO-263 (D2PAK)	-	-	-55°C ~ 150°C (TJ)
SQD35N05-26L-GE3 MOSFET N-CH 55V 30A TO252 Vishay Siliconix	4,559	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	20mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	18 nC @ 5 V	55 V	±20V	1175 pF @ 25 V	-	-	TO-252AA	-	50W (Tc)	-55°C ~ 175°C (TJ)
IRFZ44STRRPBF MOSFET N-CH 60V 50A D2PAK Vishay Siliconix	2,060	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	28mOhm @ 31A, 10V	Surface Mount	4V @ 250µA	67 nC @ 10 V	60 V	±20V	1900 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SIHF18N50C-E3 MOSFET N-CH 500V 18A TO220-3 Vishay Siliconix	3,784	-	询价单	数据表	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	270mOhm @ 10A, 10V	Through Hole	5V @ 250µA	76 nC @ 10 V	500 V	±30V	2942 pF @ 25 V	-	-	TO-220-3	-	38W (Tc)	-55°C ~ 150°C (TJ)
SI7718DN-T1-GE3 MOSFET N-CH 30V 35A PPAK1212-8 Vishay Siliconix	5,725	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	6mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	45 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IRFI744GPBF MOSFET N-CH 450V 4.9A TO220-3 Vishay Siliconix	5,274	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.9A (Tc)	10V	630mOhm @ 2.9A, 10V	Through Hole	4V @ 250µA	80 nC @ 10 V	450 V	±20V	1400 pF @ 25 V	-	-	TO-220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IRL530S MOSFET N-CH 100V 15A D2PAK Vishay Siliconix	3,026	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	4V, 5V	160mOhm @ 9A, 5V	Surface Mount	2V @ 250µA	28 nC @ 5 V	100 V	±10V	930 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)
SUD19N20-90-T4-E3 MOSFET N-CH 200V 19A TO252 Vishay Siliconix	3,116	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	6V, 10V	90mOhm @ 5A, 10V	Surface Mount	4V @ 250µA	51 nC @ 10 V	200 V	±20V	1800 pF @ 25 V	-	-	TO-252AA	-	3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)

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