Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 84

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR110TR MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix	3,750	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 2.6A, 10V	Surface Mount	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR210 MOSFET N-CH 200V 2.6A DPAK Vishay Siliconix	2,808	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	1.5Ohm @ 1.6A, 10V	Surface Mount	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFU014 MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix	8,791	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	60 V	±20V	300 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFU210 MOSFET N-CH 200V 2.6A TO251AA Vishay Siliconix	9,531	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	1.5Ohm @ 1.6A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFU110 MOSFET N-CH 100V 4.3A TO251AA Vishay Siliconix	3,284	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 900mA, 10V	Through Hole	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	TO-251AA	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRFU214 MOSFET N-CH 250V 2.2A TO251AA Vishay Siliconix	9,828	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	2Ohm @ 1.3A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	250 V	±20V	140 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR110TRL MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix	5,286	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 2.6A, 10V	Surface Mount	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR110TRR MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix	2,948	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 2.6A, 10V	Surface Mount	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR210TRR MOSFET N-CH 200V 2.6A DPAK Vishay Siliconix	4,881	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	1.5Ohm @ 1.6A, 10V	Surface Mount	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
SIE822DF-T1-E3 MOSFET N-CH 20V 50A 10POLARPAK Vishay Siliconix	5,563	-	询价单	数据表	TrenchFET®	10-PolarPAK® (S)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	3.4mOhm @ 18.3A, 10V	Surface Mount	3V @ 250µA	78 nC @ 10 V	20 V	±20V	4200 pF @ 10 V	-	-	10-PolarPAK® (S)	-	5.2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)

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