Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 88

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFBC40AL MOSFET N-CH 600V 6.2A I2PAK Vishay Siliconix	2,956	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.2A (Tc)	10V	1.2Ohm @ 3.7A, 10V	Through Hole	4V @ 250µA	42 nC @ 10 V	600 V	±30V	1036 pF @ 25 V	-	-	I2PAK	-	-	-
IRL640L MOSFET N-CH 200V 17A TO262-3 Vishay Siliconix	6,075	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 5V	180mOhm @ 10A, 5V	Through Hole	2V @ 250µA	66 nC @ 5 V	200 V	±10V	1800 pF @ 25 V	-	-	TO-262-3	-	-	-55°C ~ 150°C (TJ)
IRLR014 MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	6,027	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Tc)	4V, 5V	200mOhm @ 4.6A, 5V	Surface Mount	2V @ 250µA	8.4 nC @ 5 V	60 V	±10V	400 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR010 MOSFET N-CH 50V 8.2A DPAK Vishay Siliconix	4,208	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.2A (Tc)	10V	200mOhm @ 4.6A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	50 V	±20V	250 pF @ 25 V	-	-	DPAK	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRFR010TRL MOSFET N-CH 50V 8.2A DPAK Vishay Siliconix	8,960	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.2A (Tc)	10V	200mOhm @ 4.6A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	50 V	±20V	250 pF @ 25 V	-	-	DPAK	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRC840PBF MOSFET N-CH 500V 8A TO220-5 Vishay Siliconix	4,454	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	850mOhm @ 4.8A, 10V	Through Hole	4V @ 250µA	67 nC @ 10 V	500 V	±20V	1300 pF @ 25 V	-	Current Sensing	TO-220-5	-	125W (Tc)	-55°C ~ 150°C (TJ)
SI4462DY-T1-E3 MOSFET N-CH 200V 1.15A 8-SOIC Vishay Siliconix	5,977	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.15A (Ta)	-	480mOhm @ 1.5A, 10V	Surface Mount	4V @ 250µA	9 nC @ 10 V	200 V	-	-	-	-	8-SOIC	-	-	-
SI7413DN-T1-E3 MOSFET P-CH 20V 8.4A PPAK1212-8 Vishay Siliconix	8,913	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	8.4A (Ta)	1.8V, 4.5V	15mOhm @ 13.2A, 4.5V	Surface Mount	1V @ 400µA	51 nC @ 4.5 V	20 V	±8V	-	-	-	PowerPAK® 1212-8	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
IRFU310 MOSFET N-CH 400V 1.7A TO251AA Vishay Siliconix	4,931	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	Through Hole	4V @ 250µA	12 nC @ 10 V	400 V	±20V	170 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRF640LPBF MOSFET N-CH 200V 18A TO262-3 Vishay Siliconix	8,654	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 11A, 10V	Through Hole	4V @ 250µA	70 nC @ 10 V	200 V	±20V	1300 pF @ 25 V	-	-	TO-262-3	-	3.1W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)

共 3677 条记录«上一页 1... 84 85 86 878889 90 91...368 下一页»