Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 85

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI4890DY-T1-GE3 MOSFET N-CH 30V 11A 8-SOIC Vishay Siliconix	3,174	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	12mOhm @ 11A, 10V	Surface Mount	800mV @ 250µA (Min)	20 nC @ 5 V	30 V	±25V	-	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SI7455DP-T1-GE3 MOSFET P-CH 80V 28A PPAK SO-8 Vishay Siliconix	5,180	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	28A (Tc)	6V, 10V	25mOhm @ 10.5A, 10V	Surface Mount	4V @ 250µA	155 nC @ 10 V	80 V	±20V	5160 pF @ 40 V	-	-	PowerPAK® SO-8	-	5.2W (Ta), 83.3W (Tc)	-55°C ~ 150°C (TJ)
SUD50P08-26-E3 MOSFET P-CH 80V 50A TO252 Vishay Siliconix	6,378	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	26mOhm @ 12.9A, 10V	Surface Mount	4V @ 250µA	155 nC @ 10 V	80 V	±20V	5160 pF @ 40 V	-	-	TO-252AA	-	8.3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
IRF730L MOSFET N-CH 400V 5.5A I2PAK Vishay Siliconix	3,481	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	400 V	±20V	600 pF @ 25 V	-	-	I2PAK	-	-	-55°C ~ 150°C (TJ)
IRFI820GPBF MOSFET N-CH 500V 2.1A TO220-3 Vishay Siliconix	2,145	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.1A (Tc)	10V	3Ohm @ 1.3A, 10V	Through Hole	4V @ 250µA	24 nC @ 10 V	500 V	±20V	360 pF @ 25 V	-	-	TO-220-3	-	30W (Tc)	-55°C ~ 150°C (TJ)
SIHB15N50E-GE3 MOSFET N-CH 500V 14.5A D2PAK Vishay Siliconix	8,445	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14.5A (Tc)	10V	280mOhm @ 7.5A, 10V	Surface Mount	4V @ 250µA	66 nC @ 10 V	500 V	±30V	1162 pF @ 100 V	-	-	TO-263 (D2PAK)	-	156W (Tc)	-55°C ~ 150°C (TJ)
SI4412ADY-T1-E3 MOSFET N-CH 30V 5.8A 8SO Vishay Siliconix	5,971	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.8A (Ta)	4.5V, 10V	24mOhm @ 8A, 10V	Surface Mount	1V @ 250µA (Min)	20 nC @ 10 V	30 V	±20V	-	-	-	8-SOIC	-	1.3W (Ta)	-55°C ~ 150°C (TJ)
SI4866BDY-T1-E3 MOSFET N-CH 12V 21.5A 8SO Vishay Siliconix	7,631	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21.5A (Tc)	1.8V, 4.5V	5.3mOhm @ 12A, 4.5V	Surface Mount	1V @ 250µA	80 nC @ 4.5 V	12 V	±8V	5020 pF @ 6 V	-	-	8-SOIC	-	4.45W (Tc)	-55°C ~ 150°C (TJ)
IRF720L MOSFET N-CH 400V 3.3A I2PAK Vishay Siliconix	3,914	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.8Ohm @ 2A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±20V	410 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
IRF520S MOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix	4,167	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	100 V	±20V	360 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)

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