Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 83

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI7302DN-T1-GE3 MOSFET N-CH 220V 8.4A PPAK1212-8 Vishay Siliconix	8,256	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.4A (Tc)	4.5V, 10V	320mOhm @ 2.3A, 10V	Surface Mount	4V @ 250µA	21 nC @ 10 V	220 V	±20V	645 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.8W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
SUP53P06-20-GE3 MOSFET P-CH 60V 9.2A/53A TO220AB Vishay Siliconix	5,152	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	9.2A (Ta), 53A (Tc)	4.5V, 10V	19.5mOhm @ 30A, 10V	Through Hole	3V @ 250µA	115 nC @ 10 V	60 V	±20V	3500 pF @ 25 V	-	-	TO-220AB	-	3.1W (Ta), 104.2W (Tc)	-55°C ~ 150°C (TJ)
IRLZ14L MOSFET N-CH 60V 10A TO262-3 Vishay Siliconix	6,801	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	Through Hole	2V @ 250µA	8.4 nC @ 5 V	60 V	±10V	400 pF @ 25 V	-	-	TO-262-3	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
SIHB6N80E-GE3 MOSFET N-CH 800V 5.4A D2PAK Vishay Siliconix	2,041	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	940mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	800 V	±30V	827 pF @ 100 V	-	-	TO-263 (D2PAK)	-	78W (Tc)	-55°C ~ 150°C (TJ)
IRFD210 MOSFET N-CH 200V 600MA 4DIP Vishay Siliconix	3,859	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600mA (Ta)	10V	1.5Ohm @ 360mA, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	4-HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
IRFR110 MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix	3,706	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 2.6A, 10V	Surface Mount	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR210TR MOSFET N-CH 200V 2.6A DPAK Vishay Siliconix	4,953	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	1.5Ohm @ 1.6A, 10V	Surface Mount	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFD010 MOSFET N-CH 50V 1.7A 4DIP Vishay Siliconix	3,649	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	200mOhm @ 860mA, 10V	Through Hole	4V @ 250µA	13 nC @ 10 V	50 V	±20V	250 pF @ 25 V	-	-	4-HVMDIP	-	1W (Tc)	-55°C ~ 150°C (TJ)
IRFD014 MOSFET N-CH 60V 1.7A 4DIP Vishay Siliconix	9,386	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	10V	200mOhm @ 1A, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	60 V	±20V	310 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)
IRFD9014 MOSFET P-CH 60V 1.1A 4DIP Vishay Siliconix	9,981	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.1A (Ta)	10V	500mOhm @ 660mA, 10V	Through Hole	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)

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