| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4451DY-T1-E3MOSFET P-CH 12V 10A 8SO Vishay Siliconix |
8,980 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 1.8V, 4.5V | 8.25mOhm @ 14A, 4.5V | Surface Mount | 800mV @ 850µA | 120 nC @ 4.5 V | 12 V | ±8V | - | - | - | 8-SOIC | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SI4451DY-T1-GE3MOSFET P-CH 12V 10A 8SO Vishay Siliconix |
2,036 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 1.8V, 4.5V | 8.25mOhm @ 14A, 4.5V | Surface Mount | 800mV @ 850µA | 120 nC @ 4.5 V | 12 V | ±8V | - | - | - | 8-SOIC | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF510LMOSFET N-CH 100V 5.6A TO262-3 Vishay Siliconix |
9,429 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.6A (Tc) | - | 540mOhm @ 3.4A, 10V | Through Hole | 4V @ 250µA | 8.3 nC @ 10 V | 100 V | - | 180 pF @ 25 V | - | - | TO-262-3 | - | - | -55°C ~ 175°C (TJ) |
|
|
IRFB9N30AMOSFET N-CH 300V 9.3A TO220AB Vishay Siliconix |
8,773 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.3A (Tc) | 10V | 450mOhm @ 5.6A, 10V | Through Hole | 4V @ 250µA | 33 nC @ 10 V | 300 V | ±30V | 920 pF @ 25 V | - | - | TO-220AB | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7390DP-T1-GE3MOSFET N-CH 30V 9A PPAK SO-8 Vishay Siliconix |
7,206 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 15 nC @ 4.5 V | 30 V | ±20V | - | - | - | PowerPAK® SO-8 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
SQM50N04-4M0L_GE3MOSFET N-CHANNEL 40V 50A TO263 Vishay Siliconix |
5,034 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 130 nC @ 10 V | 40 V | ±20V | 6100 pF @ 25 V | AEC-Q101 | - | TO-263 (D2PAK) | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRC740PBFMOSFET N-CH 400V 10A TO220-5 Vishay Siliconix |
7,362 | - |
|
数据表 |
HEXFET® | TO-220-5 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 66 nC @ 10 V | 400 V | ±20V | 1200 pF @ 25 V | - | Current Sensing | TO-220-5 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9530STRRPBFMOSFET P-CH 100V 12A D2PAK Vishay Siliconix |
6,862 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | Surface Mount | 4V @ 250µA | 38 nC @ 10 V | 100 V | ±20V | 860 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) |
|
SIA443DJ-T1-E3MOSFET P-CH 20V 9A PPAK SC70-6 Vishay Siliconix |
9,315 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 1.8V, 4.5V | 45mOhm @ 4.7A, 4.5V | Surface Mount | 1V @ 250µA | 25 nC @ 8 V | 20 V | ±8V | 750 pF @ 10 V | - | - | PowerPAK® SC-70-6 | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) |
|
SIA810DJ-T1-E3MOSFET N-CH 20V 4.5A PPAK SC70-6 Vishay Siliconix |
7,701 | - |
|
数据表 |
LITTLE FOOT® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 1.8V, 4.5V | 53mOhm @ 3.7A, 4.5V | Surface Mount | 1V @ 250µA | 11.5 nC @ 8 V | 20 V | ±8V | 400 pF @ 10 V | - | Schottky Diode (Isolated) | PowerPAK® SC-70-6 Dual | - | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) |