Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 81

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI5486DU-T1-GE3 MOSFET N-CH 20V 12A CHIPFET Vishay Siliconix	7,197	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	1.8V, 4.5V	15mOhm @ 7.7A, 4.5V	Surface Mount	1V @ 250µA	54 nC @ 8 V	20 V	±8V	2100 pF @ 10 V	-	-	PowerPAK® ChipFET™ Single	-	3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)
IRC640PBF MOSFET N-CH 200V 18A TO220-5 Vishay Siliconix	2,677	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 11A, 10V	Through Hole	4V @ 250µA	70 nC @ 10 V	200 V	±20V	1300 pF @ 25 V	-	Current Sensing	TO-220-5	-	125W (Tc)	-55°C ~ 150°C (TJ)
IRF9510STRR MOSFET P-CH 100V 4A D2PAK Vishay Siliconix	3,608	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRF2807ZSTRL MOSFET N-CH 75V 75A D2PAK Vishay Siliconix	4,108	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9.4mOhm @ 53A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	75 V	±20V	3270 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 175°C (TJ)
IRF2807ZSTRR MOSFET N-CH 75V 75A D2PAK Vishay Siliconix	9,822	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9.4mOhm @ 53A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	75 V	±20V	3270 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 175°C (TJ)
IRF3205ZSTRL MOSFET N-CH 55V 75A D2PAK Vishay Siliconix	2,789	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	6.5mOhm @ 66A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	55 V	±20V	3450 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 175°C (TJ)
IRF3205ZSTRR MOSFET N-CH 55V 75A D2PAK Vishay Siliconix	6,480	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	6.5mOhm @ 66A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	55 V	±20V	3450 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 175°C (TJ)
IRL510L MOSFET N-CH 100V 5.6A TO262-3 Vishay Siliconix	9,804	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	4V, 5V	540mOhm @ 3.4A, 5V	Through Hole	2V @ 250µA	6.1 nC @ 5 V	100 V	±10V	250 pF @ 25 V	-	-	TO-262-3	-	-	-55°C ~ 175°C (TJ)
IRF820L MOSFET N-CH 500V 2.5A I2PAK Vishay Siliconix	6,120	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	24 nC @ 10 V	500 V	±20V	360 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
SI4636DY-T1-GE3 MOSFET N-CH 30V 17A 8SO Vishay Siliconix	6,599	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4.5V, 10V	8.5mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	60 nC @ 10 V	30 V	±16V	2635 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 4.4W (Tc)	-55°C ~ 150°C (TJ)

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