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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIJK140E-T1-GE3N-CHANNEL 40 V (D-S) 175 C MOSFE Vishay Siliconix |
1,500 | - |
|
数据表 |
TrenchFET® Gen V | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 140A (Ta), 795A (Tc) | 10V | 0.47mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 470 nC @ 10 V | 40 V | ±20V | 18510 pF @ 20 V | - | - | PowerPAK®10 x 12 | - | 17W (Ta), 536W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIHK155N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix |
4,000 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 155mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1514 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHH155N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
6,000 | - |
|
数据表 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 155mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 38 nC @ 10 V | 600 V | ±30V | 1465 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHH150N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix |
6,000 | - |
|
数据表 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 155mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1514 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHK155N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
4,000 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 52mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 38 nC @ 10 V | 600 V | ±20V | 1465 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR864DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
5,420 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 3.6mOhm @ 15A, 10V | Surface Mount | 2.4V @ 250µA | 65 nC @ 10 V | 30 V | ±20V | 2460 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFPE30PBFMOSFET N-CH 800V 4.1A TO247-3 Vishay Siliconix |
381 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 78 nC @ 10 V | 800 V | ±20V | 1300 pF @ 25 V | - | - | TO-247AC | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHG33N60EF-GE3MOSFET N-CH 600V 33A TO247AC Vishay Siliconix |
498 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | Through Hole | 4V @ 250µA | 155 nC @ 10 V | 600 V | ±30V | 3454 pF @ 100 V | - | - | TO-247AC | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF730ASTRRPBFMOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix |
2,674 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Surface Mount | 4.5V @ 250µA | 22 nC @ 10 V | 400 V | ±30V | 600 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4486EY-T1-GE3MOSFET N-CH 100V 5.4A 8SO Vishay Siliconix |
8,211 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.4A (Ta) | 6V, 10V | 25mOhm @ 7.9A, 10V | Surface Mount | 2V @ 250µA (Min) | 44 nC @ 10 V | 100 V | ±20V | - | - | - | 8-SOIC | - | 1.8W (Ta) | -55°C ~ 175°C (TJ) |
