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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHP050N60E-GE3MOSFET N-CH 600V 51A TO220AB Vishay Siliconix |
926 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | Through Hole | 5V @ 250µA | 130 nC @ 10 V | 600 V | ±30V | 3459 pF @ 100 V | - | - | TO-220AB | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF710LMOSFET N-CH 400V 2A I2PAK Vishay Siliconix |
4,837 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | Through Hole | 4V @ 250µA | 17 nC @ 10 V | 400 V | ±20V | 170 pF @ 25 V | - | - | I2PAK | - | - | -55°C ~ 150°C (TJ) |
|
SIHH085N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
5,665 | - |
|
数据表 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 85mOhm @ 17A, 10V | Surface Mount | 5V @ 250µA | 63 nC @ 10 V | 600 V | ±30V | 2733 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 184W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHK085N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,000 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 85mOhm @ 17A, 10V | Surface Mount | 5V @ 250µA | 63 nC @ 10 V | 600 V | ±30V | 2733 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 184W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP6N80E-GE3MOSFET N-CH 800V 5.4A TO220AB Vishay Siliconix |
7,937 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 44 nC @ 10 V | 800 V | ±30V | 827 pF @ 100 V | - | - | TO-220AB | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4410BDY-T1-GE3MOSFET N-CH 30V 7.5A 8SO Vishay Siliconix |
5,736 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.5A (Ta) | 10V | 13.5mOhm @ 10A, 10V | Surface Mount | 3V @ 250µA | 20 nC @ 5 V | 30 V | ±20V | - | - | - | 8-SOIC | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHF6N65E-GE3MOSFET N-CH 650V 7A TO220 Vishay Siliconix |
5,336 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 48 nC @ 10 V | 650 V | ±30V | 820 pF @ 100 V | - | - | TO-220 Full Pack | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHK075N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
1,926 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 71mOhm @ 15A, 10V | Surface Mount | 5V @ 250µA | 72 nC @ 10 V | 600 V | ±30V | 2954 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHF074N65E-GE3E SERIES POWER MOSFET TO-220 FUL Vishay Siliconix |
988 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 79mOhm @ 15A, 10V | Through Hole | 5V @ 250µA | 80 nC @ 10 V | 650 V | ±30V | 2904 pF @ 100 V | - | - | TO-220 Full Pack | - | 39W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF730STRRPBFMOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix |
9,046 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Surface Mount | 4V @ 250µA | 38 nC @ 10 V | 400 V | ±20V | 700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
