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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIS456DN-T1-GE3MOSFET N-CH 30V 35A PPAK 1212-8 Vishay Siliconix |
8,433 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 55 nC @ 10 V | 30 V | ±20V | 1800 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) |
|
SQ7415AENW-T1_GE3MOSFET P-CH 60V 16A PPAK1212-8 Vishay Siliconix |
2,873 | - |
|
数据表 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 65mOhm @ 5.7A, 10V | Surface Mount | 2.5V @ 250µA | 38 nC @ 10 V | 60 V | ±20V | 1385 pF @ 25 V | - | - | PowerPAK® 1212-8 | - | 53W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHP17N80E-GE3MOSFET N-CH 800V 15A TO220AB Vishay Siliconix |
1,000 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | Through Hole | 4V @ 250µA | 122 nC @ 10 V | 800 V | ±30V | 2408 pF @ 100 V | - | - | TO-220AB | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHA150N60E-GE3E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix |
2,000 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 155mOhm @ 10A, 10V | Through Hole | 5V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1514 pF @ 100 V | - | - | TO-220 Full Pack | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHA22N60AE-GE3N-CHANNEL 600V Vishay Siliconix |
979 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 180mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 96 nC @ 10 V | 600 V | ±30V | 1451 pF @ 100 V | - | - | TO-220 Full Pack | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF630STRRMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
7,427 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | Surface Mount | 4V @ 250µA | 43 nC @ 10 V | 200 V | ±20V | 800 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFIBF30GPBFMOSFET N-CH 900V 1.9A TO220-3 Vishay Siliconix |
888 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | Through Hole | 4V @ 250µA | 78 nC @ 10 V | 900 V | ±20V | 1200 pF @ 25 V | - | - | TO-220-3 | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHA155N60EF-GE3E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix |
1,842 | - |
|
数据表 |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 89mOhm @ 3.7A, 10V | Through Hole | 5V @ 250µA | 38 nC @ 10 V | 600 V | ±20V | 1465 pF @ 100 V | - | - | TO-220 Full Pack | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHFZ48RS-GE3MOSFET N-CH 60V 50A D2PAK Vishay Siliconix |
8,857 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±20V | 2400 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIHP150N60E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,985 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 155mOhm @ 10A, 10V | Through Hole | 5V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1514 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
