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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHA25N60EFL-GE3N-CHANNEL 600V Vishay Siliconix |
987 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | Through Hole | 5V @ 250µA | 75 nC @ 10 V | 600 V | ±30V | 2274 pF @ 100 V | - | - | TO-220 Full Pack | - | 39W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP25N60EFL-BE3N-CHANNEL 600V Vishay Siliconix |
897 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | Through Hole | 5V @ 250µA | 75 nC @ 10 V | 600 V | ±30V | 2274 pF @ 100 V | - | - | TO-220AB | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP125N60EF-GE3MOSFET N-CH 600V 25A TO220AB Vishay Siliconix |
976 | - |
|
数据表 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 47 nC @ 10 V | 600 V | ±30V | 1533 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5463EDC-T1-E3MOSFET P-CH 20V 3.8A 1206-8 Vishay Siliconix |
8,224 | - |
|
数据表 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.8A (Ta) | 1.8V, 4.5V | 62mOhm @ 4A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 15 nC @ 4.5 V | 20 V | ±12V | - | - | - | 1206-8 ChipFET™ | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHB30N60AEL-GE3MOSFET N-CH 600V 28A TO263 Vishay Siliconix |
2,039 | - |
|
数据表 |
EL | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 120mOhm @ 15A, 10V | Surface Mount | 4V @ 250µA | 120 nC @ 10 V | 600 V | ±30V | 2565 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF730ALPBFMOSFET N-CH 400V 5.5A I2PAK Vishay Siliconix |
5,304 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Through Hole | 4.5V @ 250µA | 22 nC @ 10 V | 400 V | ±30V | 600 pF @ 25 V | - | - | I2PAK | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH186N60EF-T1GE3MOSFET N-CH 600V 16A PPAK 8 X 8 Vishay Siliconix |
4,665 | - |
|
数据表 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 193mOhm @ 9.5A, 10V | Surface Mount | 5V @ 250µA | 32 nC @ 10 V | 600 V | ±30V | 1081 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHA100N60E-GE3MOSFET N-CH 600V 30A TO220 Vishay Siliconix |
905 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | Through Hole | 5V @ 250µA | 50 nC @ 10 V | 600 V | ±30V | 1851 pF @ 100 V | - | - | TO-220 Full Pack | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
SI3483DV-T1-E3MOSFET P-CH 30V 4.7A 6TSOP Vishay Siliconix |
3,851 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.7A (Ta) | 4.5V, 10V | 35mOhm @ 6.2A, 10V | Surface Mount | 3V @ 250µA | 35 nC @ 10 V | 30 V | ±20V | - | - | - | 6-TSOP | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) |
|
SI4493DY-T1-E3MOSFET P-CH 20V 10A 8SO Vishay Siliconix |
3,310 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 2.5V, 4.5V | 7.75mOhm @ 14A, 4.5V | Surface Mount | 1.4V @ 250µA | 110 nC @ 4.5 V | 20 V | ±12V | - | - | - | 8-SOIC | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
