Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 70

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHP155N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	1,995	-	询价单	数据表	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	38 nC @ 10 V	600 V	±20V	1465 pF @ 100 V	-	-	TO-220AB	-	179W (Tc)	-55°C ~ 150°C (TJ)
SIHB17N80E-GE3 MOSFET N-CH 800V 15A D2PAK Vishay Siliconix	888	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	290mOhm @ 8.5A, 10V	Surface Mount	4V @ 250µA	122 nC @ 10 V	800 V	±30V	2408 pF @ 100 V	-	-	TO-263 (D2PAK)	-	208W (Tc)	-55°C ~ 150°C (TJ)
SIHB11N80E-GE3 MOSFET N-CH 800V 12A D2PAK Vishay Siliconix	4,800	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	440mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	88 nC @ 10 V	800 V	±30V	1670 pF @ 100 V	-	-	TO-263 (D2PAK)	-	179W (Tc)	-55°C ~ 150°C (TJ)
SI3456BDV-T1-E3 MOSFET N-CH 30V 4.5A 6TSOP Vishay Siliconix	2,522	-	询价单	数据表	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	4.5V, 10V	35mOhm @ 6A, 10V	Surface Mount	3V @ 250µA	13 nC @ 10 V	30 V	±20V	-	-	-	6-TSOP	-	1.1W (Ta)	-55°C ~ 150°C (TJ)
SIRA16DP-T1-GE3 MOSFET N-CH 30V 16A PPAK SO-8 Vishay Siliconix	9,903	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	4.5V, 10V	6.8mOhm @ 15A, 10V	Surface Mount	2.3V @ 250µA	47 nC @ 10 V	30 V	+20V, -16V	2060 pF @ 15 V	-	-	PowerPAK® SO-8	-	-	-55°C ~ 150°C (TJ)
SIHG22N60EF-GE3 MOSFET N-CH 600V 19A TO247AC Vishay Siliconix	793	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	182mOhm @ 11A, 10V	Through Hole	4V @ 250µA	96 nC @ 10 V	600 V	±30V	1423 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
IRF9520STRRPBF MOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix	6,301	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
SIHG150N60E-GE3 E SERIES POWER MOSFET TO-247AC, Vishay Siliconix	900	-	询价单	数据表	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	36 nC @ 10 V	600 V	±30V	1514 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
SI5402BDC-T1-E3 MOSFET N-CH 30V 4.9A 1206-8 Vishay Siliconix	9,074	-	询价单	数据表	TrenchFET®	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.9A (Ta)	4.5V, 10V	35mOhm @ 4.9A, 10V	Surface Mount	3V @ 250µA	20 nC @ 10 V	30 V	±20V	-	-	-	1206-8 ChipFET™	-	1.3W (Ta)	-55°C ~ 150°C (TJ)
SI8424DB-T1-E1 MOSFET N-CH 8V 12.2A 4MICROFOOT Vishay Siliconix	8,659	-	询价单	数据表	TrenchFET®	4-XFBGA, CSPBGA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12.2A (Tc)	1.2V, 4.5V	31mOhm @ 1A, 4.5V	Surface Mount	1V @ 250µA	33 nC @ 5 V	8 V	±5V	1950 pF @ 4 V	-	-	4-Microfoot	-	2.78W (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)

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