Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 74

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI7411DN-T1-E3 MOSFET P-CH 20V 7.5A PPAK1212-8 Vishay Siliconix	3,514	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	1.8V, 4.5V	19mOhm @ 11.4A, 4.5V	Surface Mount	1V @ 300µA	41 nC @ 4.5 V	20 V	±8V	-	-	-	PowerPAK® 1212-8	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
SUM70042M-GE3 N-CHANNEL 100 V (D-S) MOSFET D2P Vishay Siliconix	780	-	询价单	数据表	TrenchFET®	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	7.5V, 10V	3.83mOhm @ 20A, 10V	Surface Mount	3.8V @ 250µA	126 nC @ 10 V	100 V	±20V	6750 pF @ 50 V	-	-	TO-263-7	-	375W (Tc)	-55°C ~ 175°C (TJ)
SIHB24N65E-GE3 MOSFET N-CH 650V 24A D2PAK Vishay Siliconix	1,868	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	145mOhm @ 12A, 10V	Surface Mount	4V @ 250µA	122 nC @ 10 V	650 V	±30V	2740 pF @ 100 V	-	-	TO-263 (D2PAK)	-	250W (Tc)	-55°C ~ 150°C (TJ)
SIHP085N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	1,995	-	询价单	数据表	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	84mOhm @ 17A, 10V	Through Hole	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2733 pF @ 100 V	-	-	TO-220AB	-	184W (Tc)	-55°C ~ 150°C (TJ)
SIHF30N60E-GE3 MOSFET N-CH 600V 29A TO220 Vishay Siliconix	2,975	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	125mOhm @ 15A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	600 V	±30V	2600 pF @ 100 V	-	-	-	-	37W (Tc)	-55°C ~ 150°C (TJ)
SIHG24N65E-GE3 MOSFET N-CH 650V 24A TO247AC Vishay Siliconix	610	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	145mOhm @ 12A, 10V	Through Hole	4V @ 250µA	122 nC @ 10 V	650 V	±30V	2740 pF @ 100 V	-	-	TO-247AC	-	250W (Tc)	-55°C ~ 150°C (TJ)
SIHF085N60EF-GE3 EF SERIES POWER MOSFET TO-220 FU Vishay Siliconix	1,000	-	询价单	数据表	EF	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	84mOhm @ 17A, 10V	Through Hole	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2733 pF @ 100 V	-	-	TO-220 Full Pack	-	35W (Tc)	-55°C ~ 150°C (TJ)
SUM90N08-7M6P-E3 MOSFET N-CH 75V 90A TO263 Vishay Siliconix	7,414	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	7.6mOhm @ 30A, 10V	Surface Mount	4.8V @ 250µA	90 nC @ 10 V	75 V	±20V	3528 pF @ 30 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SIE860DF-T1-E3 MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix	5,507	-	询价单	数据表	TrenchFET®	10-PolarPAK® (M)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	2.1mOhm @ 21.7A, 10V	Surface Mount	2.5V @ 250µA	105 nC @ 10 V	30 V	±20V	4500 pF @ 15 V	-	-	10-PolarPAK® (M)	-	5.2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
IRF730SPBF MOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix	6,024	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	400 V	±20V	700 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)

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