Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 75

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF830LPBF MOSFET N-CH 500V 4.5A TO262-3 Vishay Siliconix	4,937	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.5Ohm @ 2.7A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	500 V	±20V	610 pF @ 25 V	-	-	TO-262-3	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)
SIJH5100E-T1-GE3 N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix	1,942	-	询价单	数据表	TrenchFET®	PowerPAK® 8 x 8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 277A (Tc)	7.5V, 10V	1.89mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	128 nC @ 10 V	100 V	±20V	6900 pF @ 50 V	-	-	PowerPAK® 8 x 8	-	3.3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
SIHH125N60EF-T1GE3 MOSFET N-CH 600V 23A PPAK 8 X 8 Vishay Siliconix	3,000	-	询价单	数据表	EF	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	125mOhm @ 12A, 10V	Surface Mount	5V @ 250µA	47 nC @ 10 V	600 V	±30V	1533 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	156W (Tc)	-55°C ~ 150°C (TJ)
SIHB4N80E-GE3 MOSFET N-CH 800V 4.3A D2PAK Vishay Siliconix	9,159	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	800 V	±30V	622 pF @ 100 V	-	-	TO-263 (D2PAK)	-	69W (Tc)	-55°C ~ 150°C (TJ)
SI7636DP-T1-GE3 MOSFET N-CH 30V 17A PPAK SO-8 Vishay Siliconix	2,040	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta)	4.5V, 10V	4mOhm @ 25A, 10V	Surface Mount	3V @ 250µA	50 nC @ 4.5 V	30 V	±20V	5600 pF @ 15 V	-	-	PowerPAK® SO-8	-	1.9W (Ta)	-55°C ~ 150°C (TJ)
SIHG085N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	942	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	84mOhm @ 17A, 10V	Through Hole	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2733 pF @ 100 V	-	-	TO-247AC	-	184W (Tc)	-55°C ~ 150°C (TJ)
SIHG28N60EF-GE3 MOSFET N-CH 600V 28A TO247AC Vishay Siliconix	500	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	123mOhm @ 14A, 10V	Through Hole	4V @ 250µA	120 nC @ 10 V	600 V	±30V	2714 pF @ 100 V	-	-	TO-247AC	-	250W (Tc)	-55°C ~ 150°C (TJ)
IRF640L MOSFET N-CH 200V 18A I2PAK Vishay Siliconix	4,507	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 11A, 10V	Through Hole	4V @ 250µA	70 nC @ 10 V	200 V	±20V	1300 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)
IRFBF20PBF-BE3 MOSFET N-CH 900V 1.7A TO220AB Vishay Siliconix	7,183	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	-	8Ohm @ 1A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	TO-220AB	-	54W (Tc)	-55°C ~ 150°C (TJ)
SIHR080N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix	1,990	-	询价单	数据表	E	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	84mOhm @ 17A, 10V	Surface Mount	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2557 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	500W (Tc)	-55°C ~ 150°C (TJ)

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