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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRL520LMOSFET N-CH 100V 9.2A TO262-3 Vishay Siliconix |
9,386 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | Through Hole | 2V @ 250µA | 12 nC @ 5 V | 100 V | ±10V | 490 pF @ 25 V | - | - | TO-262-3 | - | 60W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFZ34LMOSFET N-CH 60V 30A TO262-3 Vishay Siliconix |
6,023 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | Through Hole | 4V @ 250µA | 46 nC @ 10 V | 60 V | ±20V | 1200 pF @ 25 V | - | - | TO-262-3 | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHP6N65E-GE3MOSFET N-CH 650V 7A TO220AB Vishay Siliconix |
3,741 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 48 nC @ 10 V | 650 V | ±30V | 820 pF @ 100 V | - | - | TO-220AB | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
SI2327DS-T1-E3MOSFET P-CH 200V 380MA SOT23-3 Vishay Siliconix |
4,093 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 380mA (Ta) | 6V, 10V | 2.35Ohm @ 500mA, 10V | Surface Mount | 4.5V @ 250µA | 12 nC @ 10 V | 200 V | ±20V | 510 pF @ 25 V | - | - | SOT-23-3 (TO-236) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI3473DV-T1-E3MOSFET P-CH 12V 5.9A 6TSOP Vishay Siliconix |
3,636 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.9A (Ta) | 1.8V, 4.5V | 23mOhm @ 7.9A, 4.5V | Surface Mount | 1V @ 250µA | 33 nC @ 4.5 V | 12 V | ±8V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SI5433BDC-T1-E3MOSFET P-CH 20V 4.8A 1206-8 Vishay Siliconix |
3,899 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.8A (Ta) | 1.8V, 4.5V | 37mOhm @ 4.8A, 4.5V | Surface Mount | 1V @ 250µA | 22 nC @ 4.5 V | 20 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI5435BDC-T1-GE3MOSFET P-CH 30V 4.3A 1206-8 Vishay Siliconix |
2,510 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | 4.5V, 10V | 45mOhm @ 4.3A, 10V | Surface Mount | 3V @ 250µA | 24 nC @ 10 V | 30 V | ±20V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SI4102DY-T1-GE3MOSFET N-CH 100V 3.8A 8SO Vishay Siliconix |
7,552 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.8A (Tc) | 6V, 10V | 158mOhm @ 2.7A, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 100 V | ±20V | 370 pF @ 50 V | - | - | 8-SOIC | - | 2.4W (Ta), 4.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI4409DY-T1-GE3MOSFET P-CH 150V 1.3A 8SO Vishay Siliconix |
4,623 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.3A (Tc) | 6V, 10V | 1.2Ohm @ 500mA, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 150 V | ±20V | 332 pF @ 50 V | - | - | 8-SOIC | - | 2.2W (Ta), 4.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI5433BDC-T1-GE3MOSFET P-CH 20V 4.8A 1206-8 Vishay Siliconix |
6,460 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.8A (Ta) | 1.8V, 4.5V | 37mOhm @ 4.8A, 4.5V | Surface Mount | 1V @ 250µA | 22 nC @ 4.5 V | 20 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
