Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 67

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHA4N80E-GE3 MOSFET N-CH 800V 4.3A TO220 Vishay Siliconix	2,911	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	800 V	±30V	622 pF @ 100 V	-	-	TO-220 Full Pack	-	69W (Tc)	-55°C ~ 150°C (TJ)
SIHFS11N50A-GE3 MOSFET N-CH 500V 11A TO263 Vishay Siliconix	9,876	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	520mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	52 nC @ 10 V	500 V	±30V	1423 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 150°C (TJ)
SIDR570EP-T1-RE3 N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix	5,990	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta), 90.9A (Tc)	7.5V, 10V	7.9mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	71 nC @ 10 V	150 V	±20V	3740 pF @ 75 V	-	-	PowerPAK® SO-8DC	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IRF740LCPBF-BE3 MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	975	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	-	550mOhm @ 6A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	400 V	±30V	1100 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
SIHB12N60ET1-GE3 MOSFET N-CH 600V 12A TO263 Vishay Siliconix	5,047	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	380mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	600 V	±30V	937 pF @ 100 V	-	-	TO-263 (D2PAK)	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIHB12N60ET5-GE3 MOSFET N-CH 600V 12A TO263 Vishay Siliconix	5,286	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	380mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	600 V	±30V	937 pF @ 100 V	-	-	TO-263 (D2PAK)	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIHF7N60E-GE3 MOSFET N-CHANNEL 600V 7A TO220 Vishay Siliconix	9,293	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	40 nC @ 10 V	600 V	±30V	680 pF @ 100 V	-	-	TO-220 Full Pack	-	31W (Tc)	-55°C ~ 150°C (TJ)
SIHFS9N60A-GE3 MOSFET N-CH 600V 9.2A TO263 Vishay Siliconix	4,606	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	750mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	49 nC @ 10 V	600 V	±30V	1400 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 150°C (TJ)
IRL3202L MOSFET N-CH 20V 48A TO262-3 Vishay Siliconix	8,151	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	48A (Tc)	4.5V, 7V	16mOhm @ 29A, 7V	Through Hole	700mV @ 250µA (Min)	43 nC @ 4.5 V	20 V	±10V	2000 pF @ 15 V	-	-	TO-262-3	-	69W (Tc)	-55°C ~ 150°C (TJ)
SIHP23N60E-BE3 N-CHANNEL 600V Vishay Siliconix	994	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	158mOhm @ 12A, 10V	Through Hole	4V @ 250µA	95 nC @ 10 V	600 V	±30V	2418 pF @ 100 V	-	-	TO-220AB	-	227W (Tc)	-55°C ~ 150°C (TJ)

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