Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 66

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHA20N50E-E3 MOSFET N-CH 500V 19A TO220 Vishay Siliconix	496	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	184mOhm @ 10A, 10V	Through Hole	4V @ 250µA	92 nC @ 10 V	500 V	±30V	1640 pF @ 100 V	-	-	TO-220 Full Pack	-	34W (Tc)	-55°C ~ 150°C (TJ)
SIRS4302DP-T1-GE3 N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix	11,921	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	87A (Ta), 478A (Tc)	4.5V, 10V	0.57mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	230 nC @ 10 V	30 V	+20V, -16V	10150 pF @ 15 V	-	-	PowerPAK® SO-8	-	6.9W (Ta), 208W (Tc)	-55°C ~ 150°C (TJ)
SIHU6N80E-GE3 MOSFET N-CH 800V 5.4A IPAK Vishay Siliconix	7,285	-	询价单	数据表	E	TO-251-3 Long Leads, IPAK, TO-251AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	940mOhm @ 3A, 10V	Through Hole	4V @ 250µA	44 nC @ 10 V	800 V	±30V	827 pF @ 100 V	-	-	IPAK (TO-251)	-	78W (Tc)	-55°C ~ 150°C (TJ)
SIHB25N50E-GE3 MOSFET N-CH 500V 26A TO263 Vishay Siliconix	1,000	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	10V	145mOhm @ 12A, 10V	Surface Mount	4V @ 250µA	86 nC @ 10 V	500 V	±30V	1980 pF @ 100 V	-	-	TO-263 (D2PAK)	-	250W (Tc)	-55°C ~ 150°C (TJ)
SIDR510EP-T1-RE3 N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix	5,782	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Ta), 148A (Tc)	7.5V, 10V	3.6mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	81 nC @ 10 V	100 V	±20V	4980 pF @ 50 V	-	-	PowerPAK® SO-8DC	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SI1070X-T1-E3 MOSFET N-CH 30V 1.2A SC89-6 Vishay Siliconix	3,341	-	询价单	数据表	TrenchFET®	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	2.5V, 4.5V	99mOhm @ 1.2A, 4.5V	Surface Mount	1.55V @ 250µA	8.3 nC @ 5 V	30 V	±12V	385 pF @ 15 V	-	-	SC-89 (SOT-563F)	-	236mW (Ta)	-55°C ~ 150°C (TJ)
IRFIBF20GPBF MOSFET N-CH 900V 1.2A TO220-3 Vishay Siliconix	988	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1.2A (Tc)	10V	8Ohm @ 720mA, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	TO-220-3	-	30W (Tc)	-55°C ~ 150°C (TJ)
SIHB150N60E-GE3 E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix	992	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	158mOhm @ 10A, 10V	Surface Mount	5V @ 250µA	36 nC @ 10 V	600 V	±30V	1514 pF @ 100 V	-	-	TO-263 (D2PAK)	-	179W (Tc)	-55°C ~ 150°C (TJ)
IRL640STRRPBF MOSFET N-CH 200V 17A D2PAK Vishay Siliconix	3,200	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 5V	180mOhm @ 10A, 5V	Surface Mount	2V @ 250µA	66 nC @ 5 V	200 V	±10V	1800 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
SI5458DU-T1-GE3 MOSFET N-CH 30V 6A CHIPFET Vishay Siliconix	7,959	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	4.5V, 10V	41mOhm @ 7.1A, 10V	Surface Mount	3V @ 250µA	9 nC @ 10 V	30 V	±20V	325 pF @ 15 V	-	-	PowerPAK® ChipFET™ Single	-	3.5W (Ta), 10.4W (Tc)	-55°C ~ 150°C (TJ)

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