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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQRS140ELP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
2,118 | - |
|
数据表 |
TrenchFET® GenIV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 504A (Tc) | 4.5V, 10V | 0.6mOhm @ 15A, 10V | Surface Mount | 2.2V @ 250µA | 294 nC @ 10 V | 40 V | ±20V | 15398 pF @ 25 V | AEC-Q101 | - | PowerPAK® SO-8SW | Automotive | 266W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF9620SPBFMOSFET P-CH 200V 3.5A D2PAK Vishay Siliconix |
1,997 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | Surface Mount | 4V @ 250µA | 22 nC @ 10 V | 200 V | ±20V | 350 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHG20N50E-GE3MOSFET N-CH 500V 19A TO247AC Vishay Siliconix |
485 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 92 nC @ 10 V | 500 V | ±30V | 1640 pF @ 100 V | - | - | TO-247AC | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
SQ2309ES-T1_GE3MOSFET P-CH 60V 1.7A TO236 Vishay Siliconix |
9,553 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 4.5V, 10V | 336mOhm @ 3.8A, 10V | Surface Mount | 2.5V @ 250µA | 8.5 nC @ 10 V | 60 V | ±20V | 265 pF @ 25 V | AEC-Q101 | - | SOT-23-3 (TO-236) | Automotive | 2W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHP4N80E-GE3MOSFET N-CH 800V 4.3A TO220AB Vishay Siliconix |
5,473 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 800 V | ±30V | 622 pF @ 100 V | - | - | TO-220AB | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
SUM40012EL-GE3MOSFET N-CH 40V 150A TO263 Vishay Siliconix |
2,434 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150A (Tc) | 4.5V, 10V | 1.67mOhm @ 30A, 10V | Surface Mount | 2.5V @ 250µA | 195 nC @ 10 V | 40 V | ±20V | 10930 pF @ 20 V | - | - | TO-263 (D2PAK) | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIDR220DP-T1-GE3MOSFET N-CH 25V 87.7A/100A PPAK Vishay Siliconix |
5,973 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 87.7A (Ta), 100A (Tc) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | Surface Mount | 2.1V @ 250µA | 200 nC @ 10 V | 25 V | +16V, -12V | 1085 pF @ 10 V | - | - | PowerPAK® SO-8DC | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHP7N60E-GE3MOSFET N-CH 600V 7A TO220AB Vishay Siliconix |
7,687 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Through Hole | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-220AB | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHP7N60E-E3MOSFET N-CH 600V 7A TO220AB Vishay Siliconix |
5,313 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Through Hole | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-220AB | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7846DP-T1-GE3MOSFET N-CH 150V 4A PPAK SO-8 Vishay Siliconix |
1,914 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 50mOhm @ 5A, 10V | Surface Mount | 4.5V @ 250µA | 36 nC @ 10 V | 150 V | ±20V | - | - | - | PowerPAK® SO-8 | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) |
