订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR320TRRPBFMOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
9,870 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±20V | 350 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
.jpg)
|
IRFR320PBF-BE3N-CHANNEL 400V Vishay Siliconix |
5,138 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±20V | 350 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFI614GPBFMOSFET N-CH 250V 2.1A TO220-3 Vishay Siliconix |
2,084 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.1A (Tc) | 10V | 2Ohm @ 1.3A, 10V | Through Hole | 4V @ 250µA | 8.2 nC @ 10 V | 250 V | ±20V | 140 pF @ 25 V | - | - | TO-220-3 | - | 23W (Tc) | -55°C ~ 150°C (TJ) |
|
SIA108DJ-T1-GE3MOSFET N-CH 80V 6.6A/12A PPAK Vishay Siliconix |
4,674 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6.6A (Ta), 12A (Tc) | 7.5V, 10V | 38mOhm @ 4A, 10V | Surface Mount | 4V @ 250µA | 13 nC @ 10 V | 80 V | ±20V | 545 pF @ 40 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHFR320-GE3MOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
1,902 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±20V | 350 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHFR9024TR-GE3MOSFET P-CH 60V 8.8A DPAK Vishay Siliconix |
774 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 60 V | ±20V | 570 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLD120PBFMOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix |
3,470 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.3A (Ta) | 4V, 5V | 270mOhm @ 780mA, 5V | Through Hole | 2V @ 250µA | 12 nC @ 5 V | 100 V | ±10V | 490 pF @ 25 V | - | - | 4-HVMDIP | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) |
|
SISH103DN-T1-GE3P-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
11,350 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 16A (Ta), 54A (Tc) | 4.5V, 10V | 155mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 72 nC @ 10 V | 30 V | ±25V | 2540 pF @ 15 V | - | - | PowerPAK® 1212-8SH | - | 3.67W (Ta), 41.6W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7344DP-T1-E3MOSFET N-CH 20V 11A PPAK SO-8 Vishay Siliconix |
5,523 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 8mOhm @ 17A, 10V | Surface Mount | 2.1V @ 250µA | 15 nC @ 4.5 V | 20 V | ±20V | - | - | - | PowerPAK® SO-8 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFBE20PBF-BE3MOSFET N-CH 800V 1.8A TO220AB Vishay Siliconix |
7,539 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | - | 6.5Ohm @ 1.1A, 10V | Through Hole | 4V @ 250µA | 38 nC @ 10 V | 800 V | ±20V | 530 pF @ 25 V | - | - | TO-220AB | - | 54W (Tc) | -55°C ~ 150°C (TJ) |
