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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3445ADV-T1-E3MOSFET P-CH 8V 4.4A 6TSOP Vishay Siliconix |
3,700 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.4A (Ta) | 1.8V, 4.5V | 42mOhm @ 5.8A, 4.5V | Surface Mount | 1V @ 250µA | 19 nC @ 4.5 V | 8 V | ±8V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SIR172DP-T1-GE3MOSFET N-CH 30V 20A PPAK SO-8 Vishay Siliconix |
7,730 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 16.1A, 10V | Surface Mount | 2.5V @ 250µA | 30 nC @ 10 V | 30 V | ±20V | 997 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SQ2360EES-T1-GE3MOSFET N-CH 60V 4.4A TO236 Vishay Siliconix |
9,552 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | - | 85mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | 12 nC @ 10 V | 60 V | - | 370 pF @ 25 V | - | - | SOT-23-3 (TO-236) | - | - | - |
|
SIS415DNT-T1-GE3MOSFET P-CH 20V 35A PPAK1212-8 Vishay Siliconix |
5,650 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | Surface Mount | 1.5V @ 250µA | 180 nC @ 10 V | 20 V | ±12V | 5460 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) |
|
SQS460CENW-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
5,725 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8W | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 4.5V, 10V | 30mOhm @ 5.3A, 10V | Surface Mount | 2.5V @ 250µA | 11 nC @ 10 V | 60 V | ±20V | 580 pF @ 25 V | AEC-Q101 | - | PowerPAK® 1212-8W | Automotive | 27W (Tc) | -55°C ~ 175°C (TJ) |
|
SI7407DN-T1-E3MOSFET P-CH 12V 9.9A PPAK 1212-8 Vishay Siliconix |
8,043 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.9A (Ta) | 1.8V, 4.5V | 12mOhm @ 15.6A, 4.5V | Surface Mount | 1V @ 400µA | 59 nC @ 4.5 V | 12 V | ±8V | - | - | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI7407DN-T1-GE3MOSFET P-CH 12V 9.9A PPAK 1212-8 Vishay Siliconix |
8,607 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.9A (Ta) | 1.8V, 4.5V | 12mOhm @ 15.6A, 4.5V | Surface Mount | 1V @ 400µA | 59 nC @ 4.5 V | 12 V | ±8V | - | - | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHD7N60ET4-GE3MOSFET N-CH 600V 7A TO252AA Vishay Siliconix |
8,908 | - |
|
数据表 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-252AA | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHD7N60ET5-GE3MOSFET N-CH 600V 7A TO252AA Vishay Siliconix |
8,718 | - |
|
数据表 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-252AA | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SISS4410DN-T1-GE3N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
5,980 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 36A (Tc) | 7.5V, 10V | 9mOhm @ 10A, 10V | Surface Mount | 2.4V @ 250µA | 18 nC @ 10 V | 40 V | +20V, -16V | 850 pF @ 20 V | - | - | PowerPAK® 1212-8 | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) |
