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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIAA00DJ-T1-GE3MOSFET N-CH 25V 20.1A/40A PPAK Vishay Siliconix |
4,670 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20.1A (Ta), 40A (Tc) | 4.5V, 10V | 5.6mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 24 nC @ 10 V | 25 V | +16V, -12V | 1090 pF @ 12.5 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) |
|
SUD45P03-15-E3MOSFET P-CH 30V TO252 Vishay Siliconix |
6,089 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 15mOhm @ 13A, 10V | Surface Mount | 1V @ 250µA (Min) | 125 nC @ 10 V | 30 V | ±20V | 3200 pF @ 25 V | - | - | TO-252AA | - | 4W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) |
|
SISH107DN-T1-GE3P-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
11,770 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12.6A (Ta), 34.4A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 41 nC @ 10 V | 30 V | ±20V | 1400 pF @ 15 V | - | - | PowerPAK® 1212-8SH | - | 3.57W (Ta), 26.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SISH114ADN-T1-GE3MOSFET N-CH 30V 18A/35A PPAK Vishay Siliconix |
5,982 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Ta), 35A (Tc) | 4.5V, 10V | 7.5mOhm @ 18A, 10V | Surface Mount | 2.5V @ 250µA | 32 nC @ 10 V | 30 V | ±20V | 1230 pF @ 15 V | - | - | PowerPAK® 1212-8SH | - | 3.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1022R-T1-E3MOSFET N-CH 60V 330MA SC75A Vishay Siliconix |
7,000 | - |
|
数据表 |
TrenchFET® | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 330mA (Ta) | 4.5V, 10V | 1.25Ohm @ 500mA, 10V | Surface Mount | 2.5V @ 250µA | 0.6 nC @ 4.5 V | 60 V | ±20V | 30 pF @ 25 V | - | - | SC-75A | - | 250mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI2351DS-T1-E3MOSFET P-CH 20V 2.8A SOT23-3 Vishay Siliconix |
3,880 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | - | 115mOhm @ 2.4A, 4.5V | Surface Mount | 1.5V @ 250µA | 5.1 nC @ 5 V | 20 V | - | 250 pF @ 10 V | - | - | SOT-23-3 (TO-236) | - | - | - |
|
SI4446DY-T1-E3MOSFET N-CH 40V 3.9A 8SO Vishay Siliconix |
4,399 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.9A (Ta) | 4.5V, 10V | 40mOhm @ 5.2A, 10V | Surface Mount | 1.6V @ 250µA | 12 nC @ 4.5 V | 40 V | ±12V | 700 pF @ 20 V | - | - | 8-SOIC | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI2351DS-T1-GE3MOSFET P-CH 20V 2.8A SOT23-3 Vishay Siliconix |
8,355 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | - | 115mOhm @ 2.4A, 4.5V | Surface Mount | 1.5V @ 250µA | 5.1 nC @ 5 V | 20 V | - | 250 pF @ 10 V | - | - | SOT-23-3 (TO-236) | - | - | - |
|
|
SI2335DS-T1-E3MOSFET P-CH 12V 3.2A SOT23-3 Vishay Siliconix |
2,579 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.2A (Ta) | 1.8V, 4.5V | 51mOhm @ 4A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 15 nC @ 4.5 V | 12 V | ±8V | 1225 pF @ 6 V | - | - | SOT-23-3 (TO-236) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI4446DY-T1-GE3MOSFET N-CH 40V 3.9A 8SO Vishay Siliconix |
7,416 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.9A (Ta) | 4.5V, 10V | 40mOhm @ 5.2A, 10V | Surface Mount | 1.6V @ 250µA | 12 nC @ 4.5 V | 40 V | ±12V | 700 pF @ 20 V | - | - | 8-SOIC | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
