Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 37

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRLR024TRLPBF MOSFET N-CH 60V 14A DPAK Vishay Siliconix	5,318	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	4V, 5V	100mOhm @ 8.4A, 5V	Surface Mount	2V @ 250µA	18 nC @ 5 V	60 V	±10V	870 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SIHD6N65ET1-GE3 MOSFET N-CH 650V 7A TO252AA Vishay Siliconix	4,171	-	询价单	数据表	E	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	48 nC @ 10 V	650 V	±30V	820 pF @ 100 V	-	-	TO-252AA	-	78W (Tc)	-55°C ~ 150°C (TJ)
SIHF8N50D-E3 MOSFET N-CH 500V 8.7A TO220 Vishay Siliconix	4,343	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.7A (Tc)	10V	850mOhm @ 4A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	500 V	±30V	527 pF @ 100 V	-	-	TO-220 Full Pack	-	33W (Tc)	-55°C ~ 150°C (TJ)
SI1012X-T1-GE3 MOSFET N-CH 20V 500MA SC89-3 Vishay Siliconix	10	-	询价单	数据表	TrenchFET®	SC-89, SOT-490	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	1.8V, 4.5V	700mOhm @ 600mA, 4.5V	Surface Mount	900mV @ 250µA	0.75 nC @ 4.5 V	20 V	±6V	-	-	-	SC-89-3	-	250mW (Ta)	-55°C ~ 150°C (TJ)
SISS30LDN-T1-UE3 N-CHANNEL 80 V (D-S) MOSFET 150 Vishay Siliconix	3,000	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 55.5A (Tc)	4.5V, 10V	8.5mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	50 nC @ 10 V	80 V	±20V	2070 pF @ 40 V	-	-	PowerPAK® 1212-8S	-	4.8W (Ta), 57W (Tc)	-55°C ~ 150°C (TJ)
SIHU6N65E-GE3 MOSFET N-CH 650V 7A IPAK Vishay Siliconix	6,491	-	询价单	数据表	-	TO-251-3 Long Leads, IPAK, TO-251AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3A, 10V	Through Hole	4V @ 250µA	48 nC @ 10 V	650 V	±30V	820 pF @ 100 V	-	-	IPAK (TO-251)	-	78W (Tc)	-55°C ~ 150°C (TJ)
SI4840DY-T1-GE3 MOSFET N-CH 40V 10A 8SO Vishay Siliconix	3,091	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	9mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	28 nC @ 5 V	40 V	±20V	-	-	-	8-SOIC	-	1.56W (Ta)	-55°C ~ 150°C (TJ)
IRFD9024PBF MOSFET P-CH 60V 1.6A 4DIP Vishay Siliconix	2,287	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.6A (Ta)	10V	280mOhm @ 960mA, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)
SI4322DY-T1-GE3 MOSFET N-CH 30V 18A 8SO Vishay Siliconix	8,287	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	8.5mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	38 nC @ 10 V	30 V	±20V	1640 pF @ 15 V	-	-	8-SOIC	-	3.1W (Ta), 5.4W (Tc)	-55°C ~ 150°C (TJ)
SUD50N10-34P-T4-E3 MOSFET N-CH 100V 5.9A/20A TO252 Vishay Siliconix	8,573	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.9A (Ta), 20A (Tc)	6V, 10V	34mOhm @ 7A, 10V	Surface Mount	4V @ 250µA	30 nC @ 10 V	100 V	±20V	1800 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 56W (Tc)	-55°C ~ 150°C (TJ)

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