Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 38

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SISA18BDN-T1-GE3 N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix	3,000	-	询价单	数据表	TrenchFET® Gen IV	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 60A (Tc)	4.5V, 10V	6.83mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	19 nC @ 10 V	30 V	+20V, -16V	680 pF @ 15 V	-	-	PowerPAK® 1212-8PT	-	3.2W (Ta), 36.8W (Tc)	-55°C ~ 150°C (TJ)
IRFR010TR MOSFET N-CH 50V 8.2A DPAK Vishay Siliconix	4,435	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.2A (Tc)	10V	200mOhm @ 4.6A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	50 V	±20V	250 pF @ 25 V	-	-	DPAK	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRLZ14STRRPBF MOSFET N-CH 60V 10A D2PAK Vishay Siliconix	5,227	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	Surface Mount	2V @ 250µA	8.4 nC @ 5 V	60 V	±10V	400 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRF520STRL MOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix	9,945	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	100 V	±20V	360 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
SIA4446DJ-T1-GE3 N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix	5,682	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6 Dual	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 31A (Tc)	4.5V, 10V	11mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	19 nC @ 10 V	40 V	+20V, -16V	915 pF @ 20 V	-	-	PowerPAK® SC-70-6 Dual	-	3.5W (Ta), 19.2W (Tc)	-55°C ~ 150°C (TJ)
SI4848BDY-T1-GE3 N-CHANNEL 150-V (D-S) MOSFET SO- Vishay Siliconix	9,838	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.7A (Ta), 5A (Tc)	6V, 10V	89mOhm @ 3.7A, 10V	Surface Mount	4V @ 250µA	9 nC @ 10 V	150 V	±20V	400 pF @ 75 V	-	-	8-SOIC	-	2.5W (Ta), 4.5W (Tc)	-55°C ~ 150°C (TJ)
SIA112LDJ-T1-GE3 N-CHANNEL 100-V (D-S) MOSFET POW Vishay Siliconix	5,610	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta), 8.8A (Tc)	4.5V, 10V	14mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	11.8 nC @ 10 V	100 V	±25V	355 pF @ 50 V	-	-	PowerPAK® SC-70-6	-	2.9W (Ta), 15.6W (Tc)	-55°C ~ 150°C (TJ)
SIRA00DP-T1-RE3 MOSFET N-CH 30V 100A PPAK SO-8 Vishay Siliconix	3,247	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	1mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	220 nC @ 10 V	30 V	+20V, -16V	11700 pF @ 15 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
SIHF540S-GE3 MOSFET N-CH 100V 28A D2PAK Vishay Siliconix	9,261	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	77mOhm @ 17A, 10V	Surface Mount	4V @ 250µA	72 nC @ 10 V	100 V	±20V	1700 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SI8465DB-T2-E1 MOSFET P-CH 20V 4MICROFOOT Vishay Siliconix	7,450	-	询价单	数据表	TrenchFET®	4-XFBGA, CSPBGA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	2.5V, 4.5V	104mOhm @ 1.5A, 4.5V	Surface Mount	1.5V @ 250µA	18 nC @ 10 V	20 V	±12V	450 pF @ 10 V	-	-	4-Microfoot	-	780mW (Ta), 1.8W (Tc)	-55°C ~ 150°C (TJ)

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