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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4682DY-T1-E3

SI4682DY-T1-E3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix

2,239 -
SI4682DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 38 nC @ 10 V 30 V ±20V 1595 pF @ 15 V - - 8-SOIC - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ)
SI4682DY-T1-GE3

SI4682DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix

7,191 -
SI4682DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 38 nC @ 10 V 30 V ±20V 1595 pF @ 15 V - - 8-SOIC - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ)
SIR850DP-T1-GE3

SIR850DP-T1-GE3

MOSFET N-CH 25V 30A PPAK SO-8

Vishay Siliconix

6,277 -
SIR850DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 30 nC @ 10 V 25 V ±20V 1120 pF @ 15 V - - PowerPAK® SO-8 - 4.8W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ)
SIR484DP-T1-GE3

SIR484DP-T1-GE3

MOSFET N-CH 20V 20A PPAK SO-8

Vishay Siliconix

4,744 -
SIR484DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 8.3mOhm @ 17.2A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 20 V ±20V 830 pF @ 10 V - - PowerPAK® SO-8 - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ)
SIR638DP-T1-RE3

SIR638DP-T1-RE3

MOSFET N-CH 40V 100A PPAK SO-8

Vishay Siliconix

4,426 -
SIR638DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 204 nC @ 10 V 40 V +20V, -16V 10500 pF @ 20 V - - PowerPAK® SO-8 - 104W (Tc) -55°C ~ 150°C (TJ)
SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix

5,243 -
SIRA96DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 8.8mOhm @ 10A, 10V Surface Mount 2.2V @ 250µA 15 nC @ 4.5 V 30 V +20V, -16V 1385 pF @ 15 V - - PowerPAK® SO-8 - 34.7W (Tc) -55°C ~ 150°C (TJ)
SQA409CEJW-T1_GE3

SQA409CEJW-T1_GE3

AUTOMOTIVE P-CHANNEL 12 V (D-S)

Vishay Siliconix

2,944 -
SQA409CEJW-T1_GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 19mOhm @ 4.5A, 4.5V Surface Mount, Wettable Flank 1V @ 250µA 33 nC @ 4.5 V 12 V ±8V 3070 pF @ 6 V - - PowerPAK®SC-70W-6 - 13.6W (Tc) -55°C ~ 175°C (TJ)
IRF614PBF

IRF614PBF

MOSFET N-CH 250V 2.7A TO220AB

Vishay Siliconix

3,912 -
IRF614PBF

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 250 V ±20V 140 pF @ 25 V - - TO-220AB - 36W (Tc) -55°C ~ 150°C (TJ)
IRFR420TRRPBF

IRFR420TRRPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix

5,091 -
IRFR420TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 500 V ±20V 360 pF @ 25 V - - DPAK - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
SIRA88BDP-T1-GE3

SIRA88BDP-T1-GE3

MOSFET N-CH 30V 19A/40A PPAK SO8

Vishay Siliconix

5,490 -
SIRA88BDP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 40A (Tc) 4.5V, 10V 6.83mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 19 nC @ 10 V 30 V +20V, -16V 680 pF @ 15 V - - PowerPAK® SO-8 - 3.8W (Ta), 17W (Tc) -55°C ~ 150°C (TJ)
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