| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4010DY-T1-GE3MOSFET N-CHANNEL 30V 31.3A 8SO Vishay Siliconix |
6,340 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31.3A (Tc) | 4.5V, 10V | 3.4mOhm @ 15A, 10V | Surface Mount | 2.3V @ 250µA | 77 nC @ 10 V | 30 V | +20V, -16V | 3595 pF @ 15 V | - | - | 8-SOIC | - | 6W (Tc) | -55°C ~ 150°C (TA) |
|
SI4776DY-T1-GE3MOSFET N-CHANNEL 30V 11.9A 8SO Vishay Siliconix |
7,476 | - |
|
数据表 |
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.9A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | Surface Mount | 2.3V @ 1mA | 17.5 nC @ 10 V | 30 V | ±20V | 521 pF @ 15 V | - | - | 8-SOIC | - | 4.1W (Tc) | -55°C ~ 150°C (TA) |
|
SIB415DK-T1-GE3MOSFET P-CH 30V 9A PPAK SC75-6 Vishay Siliconix |
4,757 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 87mOhm @ 4.17A, 10V | Surface Mount | 3V @ 250µA | 10.05 nC @ 10 V | 30 V | ±20V | 295 pF @ 15 V | - | - | PowerPAK® SC-75-6 | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SI2311DS-T1-GE3MOSFET P-CH 8V 3A SOT23-3 Vishay Siliconix |
2,836 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 45mOhm @ 3.5A, 4.5V | Surface Mount | 800mV @ 250µA | 12 nC @ 4.5 V | 8 V | ±8V | 970 pF @ 4 V | - | - | SOT-23-3 (TO-236) | - | 710mW (Ta) | -55°C ~ 150°C (TJ) |
|
SQP90142E_GE3MOSFET N-CH 200V 78.5A TO220AB Vishay Siliconix |
3,407 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 78.5A (Tc) | 10V | 15.3mOhm @ 20A, 10V | Through Hole | 3.5V @ 250µA | 85 nC @ 10 V | 200 V | ±20V | 4200 pF @ 25 V | AEC-Q101 | - | TO-220AB | Automotive | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
SI1002R-T1-GE3MOSFET N-CH 30V 610MA SC75A Vishay Siliconix |
4,026 | - |
|
数据表 |
- | SC-75A | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 610mA (Ta) | 1.5V, 4.5V | 560mOhm @ 500mA, 4.5V | Surface Mount | 1V @ 250µA | 2 nC @ 8 V | 30 V | ±8V | 36 pF @ 15 V | - | - | SC-75A | - | 220mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1428EDH-T1-GE3MOSFET N-CHANNEL 30V 4A SC70-6 Vishay Siliconix |
7,364 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 2.5V, 10V | 45mOhm @ 3.7A, 10V | Surface Mount | 1.3V @ 250µA | 13.5 nC @ 10 V | 30 V | ±12V | - | - | - | SC-70-6 | - | 2.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR798DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
6,743 | - |
|
数据表 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 2.05mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 130 nC @ 10 V | 30 V | ±20V | 5050 pF @ 15 V | - | Schottky Diode (Body) | PowerPAK® SO-8 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS496EDNT-T1-GE3MOSFET N-CH 30V 50A PPAK1212-8 Vishay Siliconix |
9,624 | - |
|
数据表 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 45 nC @ 10 V | 30 V | ±20V | 1515 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS626DN-T1-GE3MOSFET N-CH 25V 16A PPAK1212-8 Vishay Siliconix |
9,892 | - |
|
数据表 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 10V | 9mOhm @ 10A, 10V | Surface Mount | 1.4V @ 250µA | 60 nC @ 10 V | 25 V | ±12V | 1925 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |