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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4196DY-T1-E3

SI4196DY-T1-E3

MOSFET N-CH 20V 8A 8SO

Vishay Siliconix

2,634 -
SI4196DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 1.8V, 4.5V 27mOhm @ 8A, 4.5V Surface Mount 1V @ 250µA 22 nC @ 8 V 20 V ±8V 830 pF @ 10 V - - 8-SOIC - 2W (Ta), 4.6W (Tc) -55°C ~ 150°C (TJ)
SI4829DY-T1-GE3

SI4829DY-T1-GE3

MOSFET P-CH 20V 2A 8SO

Vishay Siliconix

3,344 -
SI4829DY-T1-GE3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Tc) 2.5V, 4.5V 215mOhm @ 2.5A, 4.5V Surface Mount 1.5V @ 250µA 8 nC @ 10 V 20 V ±12V 210 pF @ 10 V - Schottky Diode (Isolated) 8-SOIC - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ)
BS250KL-TR1-E3

BS250KL-TR1-E3

MOSFET P-CH 60V 270MA TO92-18RM

Vishay Siliconix

5,589 -
BS250KL-TR1-E3

数据表

TrenchFET® TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 270mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V Through Hole 3V @ 250µA 3 nC @ 15 V 60 V ±20V - - - TO-92-18RM - 800mW (Ta) -55°C ~ 150°C (TJ)
SISA18DN-T1-GE3

SISA18DN-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8

Vishay Siliconix

8,194 -
SISA18DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 38.3A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 21.5 nC @ 10 V 30 V +20V, -16V 1000 pF @ 15 V - - PowerPAK® 1212-8 - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ)
SI1071X-T1-E3

SI1071X-T1-E3

MOSFET P-CH 30V 0.96A SOT563F

Vishay Siliconix

5,915 -
SI1071X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 960mA (Ta) 2.5V, 10V 167mOhm @ 960mA, 10V Surface Mount 1.45V @ 250µA 13.3 nC @ 10 V 30 V ±12V 315 pF @ 15 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI1054X-T1-E3

SI1054X-T1-E3

MOSFET N-CH 12V 1.32A SC89-6

Vishay Siliconix

4,508 -
SI1054X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.32A (Ta) 1.8V, 4.5V 95mOhm @ 1.32A, 4.5V Surface Mount 1V @ 250µA 8.57 nC @ 5 V 12 V ±8V 480 pF @ 6 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI3442BDV-T1-GE3

SI3442BDV-T1-GE3

MOSFET N-CH 20V 3A 6TSOP

Vishay Siliconix

7,590 -
SI3442BDV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V Surface Mount 1.8V @ 250µA 5 nC @ 4.5 V 20 V ±12V 295 pF @ 10 V - - 6-TSOP - 860mW (Ta) -55°C ~ 150°C (TJ)
SI5447DC-T1-E3

SI5447DC-T1-E3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix

5,582 -
SI5447DC-T1-E3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 10 nC @ 4.5 V 20 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
SI5447DC-T1-GE3

SI5447DC-T1-GE3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix

8,631 -
SI5447DC-T1-GE3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 10 nC @ 4.5 V 20 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
SI3456BDV-T1-GE3

SI3456BDV-T1-GE3

MOSFET N-CH 30V 4.5A 6TSOP

Vishay Siliconix

8,411 -
SI3456BDV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V Surface Mount 3V @ 250µA 13 nC @ 10 V 30 V ±20V - - - 6-TSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
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