| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUD45P04-16P-GE3MOSFET P-CH 40V 36A TO252AA Vishay Siliconix |
7,169 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 16.2mOhm @ 14A, 20V | Surface Mount | 2.5V @ 250µA | 100 nC @ 10 V | 40 V | ±20V | 2765 pF @ 20 V | - | - | TO-252AA | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SUD50N02-09P-GE3MOSFET N-CH 20V 20A TO252 Vishay Siliconix |
7,590 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 4.5V, 10V | 14mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 16 nC @ 10 V | 20 V | ±20V | 1300 pF @ 10 V | - | - | TO-252 | - | 39.5W (Tc) | -55°C ~ 175°C (TJ) |
|
SUD50N03-12P-GE3MOSFET N-CH 30V 16.8A TO252 Vishay Siliconix |
6,444 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.8A (Ta) | 4.5V, 10V | 17mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 42 nC @ 10 V | 30 V | ±20V | 1600 pF @ 25 V | - | - | TO-252AA | - | 39W (Tc) | -55°C ~ 150°C (TJ) |
|
SUM120N04-1M7L-GE3MOSFET N-CH 40V 120A TO263 Vishay Siliconix |
7,451 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 17mOhm @ 30A, 10V | Surface Mount | 2.5V @ 250µA | 285 nC @ 10 V | 40 V | ±20V | 11685 pF @ 20 V | - | - | TO-263 (D2PAK) | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
SUM25P10-138-E3MOSFET N-CH 100V 16.7A TO263 Vishay Siliconix |
7,921 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.7A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | Surface Mount | 4V @ 250µA | 60 nC @ 10 V | 100 V | ±20V | 2110 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.75W (Ta), 88.2W (Tc) | -55°C ~ 175°C (TJ) |
|
SUM50P10-42-E3MOSFET N-CH 100V 36A TO263 Vishay Siliconix |
7,256 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 4.2mOhm @ 14A, 10V | Surface Mount | 3V @ 250µA | 160 nC @ 10 V | 100 V | ±20V | 4600 pF @ 50 V | - | - | TO-263 (D2PAK) | - | 18.8W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SUP25P10-138-GE3MOSFET N-CH 100V 16.3A TO220AB Vishay Siliconix |
2,516 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.3A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 60 nC @ 10 V | 100 V | ±20V | 2100 pF @ 50 V | - | - | TO-220AB | - | 3.1W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4845DY-T1-E3MOSFET P-CH 20V 2.7A 8SO Vishay Siliconix |
9,507 | - |
|
数据表 |
LITTLE FOOT® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.7A (Tc) | 2.5V, 4.5V | 210mOhm @ 2A, 4.5V | Surface Mount | 1.5V @ 250µA | 4.5 nC @ 4.5 V | 20 V | ±12V | 312 pF @ 10 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 1.75W (Ta), 2.75W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4831BDY-T1-E3MOSFET P-CH 30V 6.6A 8SO Vishay Siliconix |
7,588 | - |
|
数据表 |
LITTLE FOOT® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.6A (Tc) | 4.5V, 10V | 42mOhm @ 5A, 10V | Surface Mount | 3V @ 250µA | 26 nC @ 10 V | 30 V | ±20V | 625 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4831BDY-T1-GE3MOSFET P-CH 30V 6.6A 8SO Vishay Siliconix |
7,422 | - |
|
数据表 |
LITTLE FOOT® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.6A (Tc) | 4.5V, 10V | 42mOhm @ 5A, 10V | Surface Mount | 3V @ 250µA | 26 nC @ 10 V | 30 V | ±20V | 625 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) |