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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SUD45P04-16P-GE3

SUD45P04-16P-GE3

MOSFET P-CH 40V 36A TO252AA

Vishay Siliconix

7,169 -
SUD45P04-16P-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 16.2mOhm @ 14A, 20V Surface Mount 2.5V @ 250µA 100 nC @ 10 V 40 V ±20V 2765 pF @ 20 V - - TO-252AA - 2.1W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ)
SUD50N02-09P-GE3

SUD50N02-09P-GE3

MOSFET N-CH 20V 20A TO252

Vishay Siliconix

7,590 -
SUD50N02-09P-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 14mOhm @ 20A, 10V Surface Mount 3V @ 250µA 16 nC @ 10 V 20 V ±20V 1300 pF @ 10 V - - TO-252 - 39.5W (Tc) -55°C ~ 175°C (TJ)
SUD50N03-12P-GE3

SUD50N03-12P-GE3

MOSFET N-CH 30V 16.8A TO252

Vishay Siliconix

6,444 -
SUD50N03-12P-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.8A (Ta) 4.5V, 10V 17mOhm @ 20A, 10V Surface Mount 3V @ 250µA 42 nC @ 10 V 30 V ±20V 1600 pF @ 25 V - - TO-252AA - 39W (Tc) -55°C ~ 150°C (TJ)
SUM120N04-1M7L-GE3

SUM120N04-1M7L-GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix

7,451 -
SUM120N04-1M7L-GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 17mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 285 nC @ 10 V 40 V ±20V 11685 pF @ 20 V - - TO-263 (D2PAK) - 375W (Tc) -55°C ~ 175°C (TJ)
SUM25P10-138-E3

SUM25P10-138-E3

MOSFET N-CH 100V 16.7A TO263

Vishay Siliconix

7,921 -
SUM25P10-138-E3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.7A (Tc) 6V, 10V 13.8mOhm @ 6A, 10V Surface Mount 4V @ 250µA 60 nC @ 10 V 100 V ±20V 2110 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 88.2W (Tc) -55°C ~ 175°C (TJ)
SUM50P10-42-E3

SUM50P10-42-E3

MOSFET N-CH 100V 36A TO263

Vishay Siliconix

7,256 -
SUM50P10-42-E3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 4.2mOhm @ 14A, 10V Surface Mount 3V @ 250µA 160 nC @ 10 V 100 V ±20V 4600 pF @ 50 V - - TO-263 (D2PAK) - 18.8W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
SUP25P10-138-GE3

SUP25P10-138-GE3

MOSFET N-CH 100V 16.3A TO220AB

Vishay Siliconix

2,516 -
SUP25P10-138-GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.3A (Tc) 6V, 10V 13.8mOhm @ 6A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 100 V ±20V 2100 pF @ 50 V - - TO-220AB - 3.1W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ)
SI4845DY-T1-E3

SI4845DY-T1-E3

MOSFET P-CH 20V 2.7A 8SO

Vishay Siliconix

9,507 -
SI4845DY-T1-E3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Tc) 2.5V, 4.5V 210mOhm @ 2A, 4.5V Surface Mount 1.5V @ 250µA 4.5 nC @ 4.5 V 20 V ±12V 312 pF @ 10 V - Schottky Diode (Isolated) 8-SOIC - 1.75W (Ta), 2.75W (Tc) -55°C ~ 150°C (TJ)
SI4831BDY-T1-E3

SI4831BDY-T1-E3

MOSFET P-CH 30V 6.6A 8SO

Vishay Siliconix

7,588 -
SI4831BDY-T1-E3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.6A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 30 V ±20V 625 pF @ 15 V - Schottky Diode (Isolated) 8-SOIC - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ)
SI4831BDY-T1-GE3

SI4831BDY-T1-GE3

MOSFET P-CH 30V 6.6A 8SO

Vishay Siliconix

7,422 -
SI4831BDY-T1-GE3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.6A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 30 V ±20V 625 pF @ 15 V - Schottky Diode (Isolated) 8-SOIC - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ)
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