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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

MOSFET P-CH 8V 9A PPAK TSC75-6

Vishay Siliconix

6,792 -
SIB437EDKT-T1-GE3

数据表

TrenchFET® PowerPAK® TSC-75-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.2V, 4.5V 34mOhm @ 3A, 4.5V Surface Mount 700mV @ 250µA 16 nC @ 4.5 V 8 V ±5V - - - PowerPAK® TSC75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SIR814DP-T1-GE3

SIR814DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

2,110 -
SIR814DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 86 nC @ 10 V 40 V ±20V 3800 pF @ 20 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SIS776DN-T1-GE3

SIS776DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

4,175 -
SIS776DN-T1-GE3

数据表

SkyFET®, TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 6.2mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 36 nC @ 10 V 30 V ±20V 1360 pF @ 15 V - Schottky Diode (Body) PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
SQM120N03-1M5L_GE3

SQM120N03-1M5L_GE3

MOSFET N-CH 30V 120A TO263

Vishay Siliconix

4,546 -
SQM120N03-1M5L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 270 nC @ 10 V 30 V ±20V 15605 pF @ 15 V - - TO-263 - 375W (Tc) -55°C ~ 175°C (TJ)
SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

MOSFET N-CH 40V 50A TO263

Vishay Siliconix

8,206 -
SQM50N04-4M1_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 4.1mOhm @ 30A, 10V Surface Mount 3.5V @ 250µA 105 nC @ 10 V 40 V ±20V 6715 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
SI1303EDL-T1-E3

SI1303EDL-T1-E3

MOSFET P-CH 20V 670MA SC70-3

Vishay Siliconix

8,039 -
SI1303EDL-T1-E3

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 670mA (Ta) 2.5V, 4.5V 430mOhm @ 1A, 4.5V Surface Mount 600mV @ 250µA (Min) 2.5 nC @ 4.5 V 20 V ±12V - - - SC-70-3 - 290mW (Ta) -55°C ~ 150°C (TJ)
SUP50N10-21P-GE3

SUP50N10-21P-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix

9,752 -
SUP50N10-21P-GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 6V, 10V 21mOhm @ 10A, 10V Through Hole 4V @ 250µA 68 nC @ 10 V 100 V ±20V 2055 pF @ 50 V - - TO-220AB - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
SIS472ADN-T1-GE3

SIS472ADN-T1-GE3

MOSFET N-CH 30V 24A PPAK1212-8

Vishay Siliconix

7,653 -
SIS472ADN-T1-GE3

数据表

- PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 44 nC @ 10 V 30 V ±20V 1515 pF @ 15 V - - PowerPAK® 1212-8 - 28W (Tc) -55°C ~ 150°C (TJ)
SIA430DJT-T4-GE3

SIA430DJT-T4-GE3

MOSFET N-CH 20V 12A/12A PPAK

Vishay Siliconix

4,200 -
SIA430DJT-T4-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V Surface Mount 3V @ 250µA 18 nC @ 10 V 20 V ±20V 800 pF @ 10 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ)
SI1058X-T1-GE3

SI1058X-T1-GE3

MOSFET N-CH 20V SC89-6

Vishay Siliconix

2,871 -
SI1058X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 2.5V, 4.5V 91mOhm @ 1.3A, 4.5V Surface Mount 1.55V @ 250µA 5.9 nC @ 5 V 20 V ±12V 380 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
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