ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 85

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6042JNZ4C13 MOSFET N-CH 600V 42A TO247G Rohm Semiconductor	96	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	15V	104mOhm @ 21A, 15V	Through Hole	7V @ 5.5mA	100 nC @ 15 V	600 V	±30V	3500 pF @ 100 V	-	-	TO-247G	-	495W (Tc)	-55°C ~ 150°C (TJ)
BSM180C12P2E202 SICFET N-CH 1200V 204A MODULE Rohm Semiconductor	4	-	询价单	数据表	-	Module	Tray	Active	N-Channel	SiCFET (Silicon Carbide)	204A (Tc)	-	-	Chassis Mount	4V @ 35.2mA	-	1200 V	+22V, -6V	20000 pF @ 10 V	-	-	Module	-	1360W (Tc)	175°C (TJ)
BSM300C12P3E201 SICFET N-CH 1200V 300A MODULE Rohm Semiconductor	4	-	询价单	数据表	-	Module	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	300A (Tc)	-	-	Chassis Mount	5.6V @ 80mA	-	1200 V	+22V, -4V	15000 pF @ 10 V	-	-	Module	-	1360W (Tc)	-40°C ~ 150°C (TJ)
BSM400C12P3G202 SICFET N-CH 1200V 400A MODULE Rohm Semiconductor	4	-	询价单	数据表	-	Module	Tray	Not For New Designs	N-Channel	SiCFET (Silicon Carbide)	400A (Tc)	-	-	Chassis Mount	5.6V @ 106.8mA	-	1200 V	+22V, -4V	17000 pF @ 10 V	-	-	Module	-	1570W (Tc)	175°C (TJ)
RHK005N03FRAT146 MOSFET N-CH 30V 500MA SMT3 Rohm Semiconductor	137	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	4V, 10V	550mOhm @ 500mA, 10V	Surface Mount	2.5V @ 1mA	-	30 V	±20V	45 pF @ 10 V	-	-	SMT3	-	200mW (Ta)	150°C (TJ)
R5013ANXFU6 MOSFET N-CH 500V 13A TO220FM Rohm Semiconductor	9,653	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	380mOhm @ 6.5A, 10V	Through Hole	4.5V @ 1mA	35 nC @ 10 V	500 V	±30V	1300 pF @ 25 V	-	-	TO-220FM	-	50W (Tc)	150°C (TJ)
RDX050N50FU6 MOSFET N-CH 500V 5A TO220FM Rohm Semiconductor	8,829	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	4V @ 1mA	16 nC @ 10 V	500 V	±30V	500 pF @ 25 V	-	-	TO-220FM	-	35W (Tc)	150°C (TJ)
RDX060N60FU6 MOSFET N-CH 600V 6A TO220FM Rohm Semiconductor	5,186	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.2Ohm @ 3A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	600 V	±30V	950 pF @ 25 V	-	-	TO-220FM	-	40W (Tc)	150°C (TJ)
RDX080N50FU6 MOSFET N-CH 500V 8A TO220FM Rohm Semiconductor	5,441	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	850mOhm @ 4A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	500 V	±30V	920 pF @ 25 V	-	-	TO-220FM	-	40W (Tc)	150°C (TJ)
RDX100N60FU6 MOSFET N-CH 600V 10A TO220FM Rohm Semiconductor	9,651	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	650mOhm @ 5A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	600 V	±30V	1600 pF @ 25 V	-	-	TO-220FM	-	45W (Tc)	150°C (TJ)

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