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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RCJ450N20TL

RCJ450N20TL

MOSFET N-CH 200V 45A LPTS

Rohm Semiconductor

57 -
RCJ450N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 200 V ±30V 4200 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
R6511KNJTL

R6511KNJTL

MOSFET N-CH 650V 11A LPTS

Rohm Semiconductor

90 -
R6511KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 5V @ 320µA 22 nC @ 10 V 650 V ±20V 760 pF @ 25 V - - LPTS - 124W (Tc) 150°C (TJ)
R6515ENJTL

R6515ENJTL

MOSFET N-CH 650V 15A LPTS

Rohm Semiconductor

100 -
R6515ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Surface Mount 4V @ 430µA 40 nC @ 10 V 650 V ±20V 910 pF @ 25 V - - LPTS - 184W (Tc) 150°C (TJ)
R6520ENJTL

R6520ENJTL

MOSFET N-CH 650V 20A LPTS

Rohm Semiconductor

100 -
R6520ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Surface Mount 4V @ 630µA 61 nC @ 10 V 650 V ±20V 1400 pF @ 25 V - - LPTS - 231W (Tc) 150°C (TJ)
R6524ENJTL

R6524ENJTL

MOSFET N-CH 650V 24A LPTS

Rohm Semiconductor

94 -
R6524ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Surface Mount 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - LPTS - 245W (Tc) 150°C (TJ)
R6020JNZC8

R6020JNZC8

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

30 -
R6020JNZC8

数据表

- TO-3P-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 15V 234mOhm @ 10A, 15V Through Hole 7V @ 3.5mA 45 nC @ 15 V 600 V ±30V 1500 pF @ 100 V - - TO-3PF - 76W (Tc) -55°C ~ 150°C (TJ)
R6030JNZC8

R6030JNZC8

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

29 -
R6030JNZC8

数据表

- TO-3P-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 15V 143mOhm @ 15A, 15V Through Hole 7V @ 5.5mA 74 nC @ 15 V 600 V ±30V 2500 pF @ 100 V - - TO-3PF - 93W (Tc) -55°C ~ 150°C (TJ)
RDN050N20FU6

RDN050N20FU6

MOSFET N-CH 200V 5A TO220FN

Rohm Semiconductor

9,340 -
RDN050N20FU6

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 720mOhm @ 2.5A, 10V Through Hole 4V @ 1mA 18.6 nC @ 10 V 200 V ±30V 292 pF @ 10 V - - TO-220FN - 30W (Tc) 150°C (TJ)
RDN100N20FU6

RDN100N20FU6

MOSFET N-CH 200V 10A TO220FN

Rohm Semiconductor

6,739 -
RDN100N20FU6

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 360mOhm @ 5A, 10V Through Hole 4V @ 1mA 30 nC @ 10 V 200 V ±30V 543 pF @ 10 V - - TO-220FN - 35W (Tc) 150°C (TJ)
RDN150N20FU6

RDN150N20FU6

MOSFET N-CH 200V 15A TO220FN

Rohm Semiconductor

3,676 -
RDN150N20FU6

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) 10V 160mOhm @ 7.5A, 10V Through Hole 4V @ 1mA 64 nC @ 10 V 200 V ±30V 1224 pF @ 10 V - - TO-220FN - 40W (Tc) 150°C (TJ)
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