ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 81

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6015ANX MOSFET N-CH 600V 15A TO220FM Rohm Semiconductor	166	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	300mOhm @ 7.5A, 10V	Through Hole	4.5V @ 1mA	50 nC @ 10 V	600 V	±30V	1700 pF @ 25 V	-	-	TO-220FM	-	77W (Tc)	150°C (TJ)
R6046FNZ1C9 MOSFET N-CH 600V 46A TO247 Rohm Semiconductor	278	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	98mOhm @ 23A, 10V	Through Hole	5V @ 1mA	150 nC @ 10 V	600 V	±30V	6230 pF @ 25 V	-	-	TO-247	-	120W (Tc)	150°C (TJ)
SCT3080ARC14 SICFET N-CH 650V 30A TO247-4L Rohm Semiconductor	249	-	询价单	数据表	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	18V	104mOhm @ 10A, 18V	Through Hole	5.6V @ 5mA	48 nC @ 18 V	650 V	+22V, -4V	571 pF @ 500 V	-	-	TO-247-4L	-	134W	175°C (TJ)
SCT3105KRC14 SICFET N-CH 1200V 24A TO247-4L Rohm Semiconductor	102	-	询价单	数据表	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	24A (Tc)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	-	-	TO-247-4L	-	134W	175°C (TJ)
SCT3060ARC14 SICFET N-CH 650V 39A TO247-4L Rohm Semiconductor	344	-	询价单	数据表	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	39A (Tc)	18V	78mOhm @ 13A, 18V	Through Hole	5.6V @ 6.67mA	58 nC @ 18 V	650 V	+22V, -4V	852 pF @ 500 V	-	-	TO-247-4L	-	165W	175°C (TJ)
R6046ANZ1C9 MOSFET N-CH 600V 46A TO247 Rohm Semiconductor	444	-	询价单	数据表	-	TO-247-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	90mOhm @ 23A, 10V	Through Hole	4.5V @ 1mA	150 nC @ 10 V	600 V	±30V	6000 pF @ 25 V	-	-	TO-247	-	120W (Tc)	150°C (TJ)
SCT3080KRC14 SICFET N-CH 1200V 31A TO247-4L Rohm Semiconductor	270	-	询价单	数据表	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	18V	104mOhm @ 10A, 18V	Through Hole	5.6V @ 5mA	60 nC @ 18 V	1200 V	+22V, -4V	785 pF @ 800 V	-	-	TO-247-4L	-	165W	175°C (TJ)
RK7002AT116 MOSFET N-CH 60V 300MA SST3 Rohm Semiconductor	9,900	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	4V, 10V	1Ohm @ 300mA, 10V	Surface Mount	2.5V @ 1mA	6 nC @ 10 V	60 V	±20V	33 pF @ 10 V	-	-	SST3	-	200mW (Ta)	150°C (TJ)
RSS125N03TB MOSFET N-CH 30V 12.5A 8SOP Rohm Semiconductor	7,471	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Ta)	4V, 10V	8.9mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 1mA	28 nC @ 5 V	30 V	20V	1670 pF @ 10 V	-	-	8-SOP	-	2W (Ta)	150°C (TJ)
RSS140N03TB MOSFET N-CH 30V 14A 8SOP Rohm Semiconductor	5,656	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	4V, 10V	6.7mOhm @ 14A, 10V	Surface Mount	2.5V @ 1mA	37 nC @ 5 V	30 V	20V	3150 pF @ 10 V	-	-	8-SOP	-	2W (Ta)	150°C (TJ)

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