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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RQ3E130BNTB

RQ3E130BNTB

MOSFET N-CH 30V 13A 8HSMT

Rohm Semiconductor

7,403 -
RQ3E130BNTB

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 6mOhm @ 13A, 10V Surface Mount 2.5V @ 1mA 36 nC @ 10 V 30 V ±20V 1900 pF @ 15 V - - 8-HSMT (3.2x3) - 2W (Ta) 150°C (TJ)
BSS84XHZGG2CR

BSS84XHZGG2CR

MOSFET P-CH 60V 230MA DFN1010-3W

Rohm Semiconductor

5,345 -
BSS84XHZGG2CR

数据表

- 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 230mA (Ta) - 5.3Ohm @ 230mA, 10V Surface Mount 2.5V @ 100µA - 60 V ±20V 34 pF @ 30 V AEC-Q101 - DFN1010-3W Automotive 1W (Ta) 150°C (TJ)
RQ6E035TNTR

RQ6E035TNTR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor

9,664 -
RQ6E035TNTR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 2.5V, 4.5V 54mOhm @ 3.5A, 4.5V Surface Mount 1.5V @ 1mA 6.4 nC @ 4.5 V 30 V ±12V 285 pF @ 10 V - - TSMT6 (SC-95) - 950mW (Ta) 150°C (TJ)
RJ1U330AAFRGTL

RJ1U330AAFRGTL

MOSFET N-CH 250V 33A LPTS

Rohm Semiconductor

17 -
RJ1U330AAFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 105mOhm @ 16.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 250 V ±30V 4500 pF @ 25 V AEC-Q101 - LPTS Automotive 211W (Tc) 150°C (TJ)
R6020ENZC17

R6020ENZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

3,846 -
R6020ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±20V 1400 pF @ 25 V - - TO-3PF - 120W (Tc) 150°C (TJ)
R6020PNJFRATL

R6020PNJFRATL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor

4,724 -
R6020PNJFRATL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 250mOhm @ 10A, 10V Surface Mount 4.5V @ 1mA 65 nC @ 10 V 600 V ±30V 2040 pF @ 25 V AEC-Q101 - LPTS Automotive 304W (Tc) 150°C (TJ)
RAL025P01TCR

RAL025P01TCR

MOSFET P-CH 12V 2.5A TUMT6

Rohm Semiconductor

6,434 -
RAL025P01TCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 1.5V, 4.5V 62mOhm @ 2.5A, 4.5V Surface Mount 1V @ 1mA 16 nC @ 4.5 V 12 V -8V 2000 pF @ 6 V - - TUMT6 - 320mW (Ta) 150°C (TJ)
RS1E200BNTB

RS1E200BNTB

MOSFET N-CH 30V 20A 8HSOP

Rohm Semiconductor

2,514 -
RS1E200BNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 68A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 59 nC @ 10 V 30 V ±20V 3100 pF @ 15 V - - 8-HSOP - 3W (Ta), 25W (Tc) 150°C (TJ)
RSS100N03FU6TB

RSS100N03FU6TB

MOSFET N-CH 30V 10A 8SOP

Rohm Semiconductor

6,927 -
RSS100N03FU6TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 5 V 30 V 20V 1070 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
RSS110N03FU6TB

RSS110N03FU6TB

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor

4,937 -
RSS110N03FU6TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4V, 10V 10.7mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 17 nC @ 5 V 30 V 20V 1300 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
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