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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6004ENX

R6004ENX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor

97 -
R6004ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 980mOhm @ 1.5A, 10V Through Hole 4V @ 1mA 15 nC @ 10 V 600 V ±20V 250 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
RCJ160N20TL

RCJ160N20TL

MOSFET N-CH 200V 16A LPTS

Rohm Semiconductor

1,000 -
RCJ160N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 180mOhm @ 8A, 10V Surface Mount 5.25V @ 1mA 26 nC @ 10 V 200 V ±30V 1370 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
R6504KNJTL

R6504KNJTL

MOSFET N-CH 650V 4A LPTS

Rohm Semiconductor

72 -
R6504KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V Surface Mount 5V @ 130µA 10 nC @ 10 V 650 V ±20V 270 pF @ 25 V - - LPTS - 58W (Tc) 150°C (TJ)
R6507KNJTL

R6507KNJTL

MOSFET N-CH 650V 7A LPTS

Rohm Semiconductor

80 -
R6507KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 665mOhm @ 2.4A, 10V Surface Mount 5V @ 200µA 14.5 nC @ 10 V 650 V ±20V 470 pF @ 25 V - - LPTS - 78W (Tc) 150°C (TJ)
R6511ENXC7G

R6511ENXC7G

650V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

40 -
R6511ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 400mOhm @ 3.8A, 10V Through Hole 4V @ 320µA 32 nC @ 10 V 650 V ±20V 670 pF @ 25 V - - TO-220FM - 53W (Tc) 150°C (TJ)
R6509KNJTL

R6509KNJTL

MOSFET N-CH 650V 9A LPTS

Rohm Semiconductor

87 -
R6509KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 585mOhm @ 2.8A, 10V Surface Mount 5V @ 230µA 16.5 nC @ 10 V 650 V ±20V 540 pF @ 25 V - - LPTS - 94W (Tc) 150°C (TJ)
R6511ENJTL

R6511ENJTL

MOSFET N-CH 650V 11A LPTS

Rohm Semiconductor

90 -
R6511ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 4V @ 320µA 32 nC @ 10 V 650 V ±20V 670 pF @ 25 V - - LPTS - 124W (Tc) 150°C (TJ)
R6515KNJTL

R6515KNJTL

MOSFET N-CH 650V 15A LPTS

Rohm Semiconductor

80 -
R6515KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Surface Mount 5V @ 430µA 27.5 nC @ 10 V 650 V ±20V 1050 pF @ 25 V - - LPTS - 184W (Tc) 150°C (TJ)
R6520KNJTL

R6520KNJTL

MOSFET N-CH 650V 20A LPTS

Rohm Semiconductor

98 -
R6520KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Surface Mount 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - LPTS - 231W (Tc) 150°C (TJ)
R6030ENZ4C13

R6030ENZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

15 -
R6030ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4V @ 1mA 85 nC @ 10 V 600 V ±20V 2100 pF @ 25 V - - TO-247 - 305W (Tc) 150°C (TJ)
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