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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RCX200N20

RCX200N20

MOSFET N-CH 200V 20A TO220FM

Rohm Semiconductor

33 -
RCX200N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 10A, 10V Through Hole 5V @ 1mA 40 nC @ 10 V 200 V ±30V 1900 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
R6009KNX

R6009KNX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

86 -
R6009KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Through Hole 5V @ 1mA 16.5 nC @ 10 V 600 V ±20V 540 pF @ 25 V - - TO-220FM - 48W (Tc) -55°C ~ 150°C (TJ)
RCX700N20

RCX700N20

MOSFET N-CH 200V 70A TO220FM

Rohm Semiconductor

40 -
RCX700N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 42.7mOhm @ 35A, 10V Through Hole 5V @ 1mA 125 nC @ 10 V 200 V ±30V 6900 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
BSM180C12P3C202

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Rohm Semiconductor

9 -
BSM180C12P3C202

数据表

- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 180A (Tc) - - Chassis Mount 5.6V @ 50mA - 1200 V +22V, -4V 9000 pF @ 10 V - - Module - 880W (Tc) -40°C ~ 150°C (TJ)
RUL035N02FRATR

RUL035N02FRATR

MOSFET N-CH 20V 3.5A TUMT6

Rohm Semiconductor

245 -
RUL035N02FRATR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.5V, 4.5V 43mOhm @ 3.5A, 4.5V Surface Mount 1V @ 1mA 5.7 nC @ 4.5 V 20 V ±10V 460 pF @ 10 V AEC-Q101 - TUMT6 Automotive 1W (Ta) 150°C (TJ)
RAL035P01TCR

RAL035P01TCR

MOSFET P-CH 12V 3.5A TUMT6

Rohm Semiconductor

574 -
RAL035P01TCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.5V, 4.5V 42mOhm @ 3.5A, 4.5V Surface Mount 1V @ 1mA 22 nC @ 4.5 V 12 V -8V 2700 pF @ 6 V - - TUMT6 - 1W (Ta) 150°C (TJ)
QS5U36TR

QS5U36TR

MOSFET N-CH 20V 2.5A TSMT5

Rohm Semiconductor

186 -
QS5U36TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 1.5V, 4.5V 81mOhm @ 2.5A, 4.5V Surface Mount 1.3V @ 1mA 3.5 nC @ 4.5 V 20 V ±10V 280 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C (TJ)
RSQ020N03HZGTR

RSQ020N03HZGTR

MOSFET N-CH 30V 2A TSMT6

Rohm Semiconductor

889 -
RSQ020N03HZGTR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 134mOhm @ 2A, 10V Surface Mount 2.5V @ 1mA 3.1 nC @ 5 V 30 V ±20V 110 pF @ 10 V AEC-Q101 - TSMT6 (SC-95) Automotive 950mW (Ta) 150°C (TJ)
QS5U27TR

QS5U27TR

MOSFET P-CH 20V 1.5A TSMT5

Rohm Semiconductor

98 -
QS5U27TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V Surface Mount 2V @ 1mA 4.2 nC @ 4.5 V 20 V ±12V 325 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C (TJ)
R6007ENX

R6007ENX

MOSFET N-CH 600V 7A TO220FM

Rohm Semiconductor

55 -
R6007ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Through Hole 4V @ 1mA 20 nC @ 10 V 600 V ±20V 390 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
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