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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6012FNJTL

R6012FNJTL

MOSFET N-CH 600V 12A LPT

Rohm Semiconductor

938 -
R6012FNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 510mOhm @ 6A, 10V Surface Mount 5V @ 1mA 35 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - LPTS - 50W (Tc) 150°C (TJ)
RSJ800N06TL

RSJ800N06TL

MOSFET N-CH 60V 80A LPTS

Rohm Semiconductor

1,990 -
RSJ800N06TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 60 V - - - - LPTS - - -
R6008FNJTL

R6008FNJTL

MOSFET N-CH 600V 8A LPTS

Rohm Semiconductor

1,751 -
R6008FNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 950mOhm @ 4A, 10V Surface Mount 4V @ 1mA 20 nC @ 10 V 600 V ±30V 580 pF @ 25 V - - LPTS - 50W (Tc) 150°C (TJ)
R6015FNJTL

R6015FNJTL

MOSFET N-CH 600V 15A LPT

Rohm Semiconductor

980 -
R6015FNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 350mOhm @ 7.5A, 10V Surface Mount 5V @ 1mA 42 nC @ 10 V 600 V ±30V 1660 pF @ 25 V - - LPTS - 255W (Tc) 150°C (TJ)
BSM600C12P3G201

BSM600C12P3G201

SICFET N-CH 1200V 600A MODULE

Rohm Semiconductor

4,061 -
BSM600C12P3G201

数据表

- Module Tray Not For New Designs N-Channel SiCFET (Silicon Carbide) 600A (Tc) - - Chassis Mount 5.6V @ 182mA - 1200 V +22V, -4V 28000 pF @ 10 V - - Module - 2460W (Tc) 175°C (TJ)
R6020FNJTL

R6020FNJTL

MOSFET N-CH 600V 20A LPT

Rohm Semiconductor

958 -
R6020FNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 280mOhm @ 10A, 10V Surface Mount 5V @ 1mA 60 nC @ 10 V 600 V ±30V 2350 pF @ 25 V - - LPTS - 304W (Tc) 150°C (TJ)
R6507ENJTL

R6507ENJTL

MOSFET N-CH 650V 7A LPTS

Rohm Semiconductor

998 -
R6507ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 665mOhm @ 2.4A, 10V Surface Mount 4V @ 200µA 20 nC @ 10 V 650 V ±20V 390 pF @ 25 V - - LPTS - 78W (Tc) 150°C (TJ)
R5011FNX

R5011FNX

MOSFET N-CH 500V 11A TO-220FM

Rohm Semiconductor

418 -
R5011FNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 520mOhm @ 5.5A, 10V Through Hole 4V @ 1mA 30 nC @ 10 V 500 V ±30V 950 pF @ 25 V - - TO-220FM - 59W (Tc) 150°C (TJ)
R6008FNX

R6008FNX

MOSFET N-CH 600V 8A TO-220FM

Rohm Semiconductor

777 -
R6008FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 950mOhm @ 4A, 10V Through Hole 4V @ 1mA 20 nC @ 10 V 600 V ±30V 580 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
R6015FNX

R6015FNX

MOSFET N-CH 600V 15A TO-220FM

Rohm Semiconductor

648 -
R6015FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 350mOhm @ 7.5A, 10V Through Hole 5V @ 1mA 42 nC @ 10 V 600 V ±30V 1660 pF @ 25 V - - TO-220FM - 77W (Tc) 150°C (TJ)
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