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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6576KNZ4C13

R6576KNZ4C13

650V 76A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

300 -
R6576KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 46mOhm @ 44.4A, 10V Through Hole 5V @ 2.96mA 165 nC @ 10 V 650 V ±20V 7400 pF @ 25 V - - TO-247G - 735W (Tc) 150°C (TJ)
RDD020N60TL

RDD020N60TL

MOSFET N-CH 600V 2A CPT3

Rohm Semiconductor

3,478 -
RDD020N60TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V - Surface Mount - - 600 V ±30V - - - CPT3 - 20W (Tc) 150°C (TJ)
RRR040P03TL

RRR040P03TL

MOSFET P-CH 30V 4A TSMT3

Rohm Semiconductor

2,142 -
RRR040P03TL

数据表

- SC-96 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4A (Ta) 4V, 10V 45mOhm @ 4A, 10V Surface Mount 2.5V @ 1mA 10.5 nC @ 5 V 30 V ±20V 1000 pF @ 10 V - - TSMT3 - 1W (Ta) 150°C (TJ)
SCT3080KW7TL

SCT3080KW7TL

SICFET N-CH 1200V 30A TO263-7

Rohm Semiconductor

785 -
SCT3080KW7TL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 30A (Tc) - 104mOhm @ 10A, 18V Surface Mount 5.6V @ 5mA 60 nC @ 18 V 1200 V +22V, -4V 785 pF @ 800 V - - TO-263-7 - 159W 175°C (TJ)
SCT4026DRHRC15

SCT4026DRHRC15

750V, 56A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

460 -
SCT4026DRHRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 56A (Tc) 18V 34mOhm @ 29A, 18V Through Hole 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 176W 175°C (TJ)
SCT4026DEHRC11

SCT4026DEHRC11

750V, 56A, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

320 -
SCT4026DEHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 56A (Tc) 18V 34mOhm @ 29A, 18V Through Hole 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V AEC-Q101 - TO-247N Automotive 176W 175°C (TJ)
SCT4026DEC11

SCT4026DEC11

750V, 26M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

4,887 -
SCT4026DEC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 56A (Tc) 18V 34mOhm @ 29A, 18V Through Hole 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V - - TO-247N - 176W 175°C (TJ)
SCT2160KEHRC11

SCT2160KEHRC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor

374 -
SCT2160KEHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 22A (Tc) 18V 208mOhm @ 7A, 18V Through Hole 4V @ 2.5mA 62 nC @ 18 V 1200 V +22V, -6V 1200 pF @ 800 V AEC-Q101 - TO-247N Automotive 165W (Tc) 175°C (TJ)
SCT4026DW7HRTL

SCT4026DW7HRTL

750V, 51A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

995 -
SCT4026DW7HRTL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 51A (Tc) 18V 34mOhm @ 29A, 18V Surface Mount 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V AEC-Q101 - TO-263-7L Automotive 150W 175°C (TJ)
SCT4026DW7TL

SCT4026DW7TL

750V, 51A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

988 -
SCT4026DW7TL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 51A (Tj) 18V 34mOhm @ 29A, 18V Surface Mount 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V - - TO-263-7L - 150W 175°C (TJ)
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