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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6030KNZ4C13

R6030KNZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

584 -
R6030KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-247 - 305W (Tc) 150°C (TJ)
R6535ENZC17

R6535ENZC17

MOSFET N-CH 650V 35A TO3

Rohm Semiconductor

300 -
R6535ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 115mOhm @ 18.1A, 10V Through Hole 4V @ 1.21mA 110 nC @ 10 V 650 V ±20V 2600 pF @ 25 V - - TO-3PF - 102W (Tc) 150°C (TJ)
RSY200N05TL

RSY200N05TL

MOSFET N-CH 45V 20A TCPT3

Rohm Semiconductor

5,946 -
RSY200N05TL

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V - Surface Mount - - 45 V ±20V - - - TCPT3 - 20W (Ta) 150°C (TJ)
R6020KNZ4C13

R6020KNZ4C13

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

410 -
R6020KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 5V @ 1mA 40 nC @ 10 V 600 V ±20V 1550 pF @ 25 V - - TO-247 - 231W (Tc) 150°C (TJ)
SCT4062KRC15

SCT4062KRC15

1200V, 62M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

4,925 -
SCT4062KRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 26A (Tc) 18V 81mOhm @ 12A, 18V Through Hole 4.8V @ 6.45mA 64 nC @ 18 V 1200 V +21V, -4V 1498 pF @ 800 V - - TO-247-4L - 115W 175°C (TJ)
RP1E090RPTR

RP1E090RPTR

MOSFET P-CH 30V 9A MPT6

Rohm Semiconductor

9,984 -
RP1E090RPTR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Ta) 4V, 10V 16.9mOhm @ 9A, 10V Surface Mount 2.5V @ 1mA 30 nC @ 5 V 30 V ±20V 3000 pF @ 10 V - - MPT6 - 2W (Ta) 150°C (TJ)
R6035KNZ4C13

R6035KNZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

600 -
R6035KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 600 V ±20V 3000 pF @ 25 V - - TO-247 - 379W (Tc) 150°C (TJ)
R6547ENZ4C13

R6547ENZ4C13

650V 47A TO-247, LOW-NOISE POWER

Rohm Semiconductor

324 -
R6547ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 80mOhm @ 25.8A, 10V Through Hole 4V @ 1.72mA 150 nC @ 10 V 650 V ±20V 3800 pF @ 25 V - - TO-247G - 480W (Tc) 150°C (TJ)
R6025JNZ4C13

R6025JNZ4C13

MOSFET N-CH 600V 25A TO247G

Rohm Semiconductor

597 -
R6025JNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 15V 182mOhm @ 12.5A, 15V Through Hole 7V @ 4.5mA 57 nC @ 15 V 600 V ±30V 1900 pF @ 100 V - - TO-247G - 306W (Tc) -55°C ~ 150°C (TJ)
RHK005N03T146

RHK005N03T146

MOSFET N-CH 30V 500MA SMT3

Rohm Semiconductor

6,382 -
RHK005N03T146

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500mA (Ta) 4V, 10V 550mOhm @ 500mA, 10V Surface Mount 2.5V @ 1mA - 30 V ±20V 45 pF @ 10 V - - SMT3 - 200mW (Ta) 150°C (TJ)
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