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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RHK003N06T146

RHK003N06T146

MOSFET N-CH 60V 300MA SMT3

Rohm Semiconductor

2,000 -
RHK003N06T146

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4V, 10V 1Ohm @ 300mA, 10V Surface Mount 2.5V @ 1mA 6 nC @ 10 V 60 V ±20V 33 pF @ 10 V - - SMT3 - 200mW (Ta) 150°C (TJ)
RRQ020P03TCR

RRQ020P03TCR

MOSFET P-CH 30V 2A TSMT6

Rohm Semiconductor

2,939 -
RRQ020P03TCR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 160mOhm @ 2A, 10V Surface Mount 2.5V @ 1mA 3.2 nC @ 5 V 30 V ±20V 230 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
RF6G035BGTCR

RF6G035BGTCR

NCH 40V 3.5A, TUMT6, POWER MOSFE

Rohm Semiconductor

3,000 -
RF6G035BGTCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 46mOhm @ 3.5A, 10V Surface Mount 2.5V @ 1mA 3.5 nC @ 10 V 40 V ±20V 150 pF @ 20 V - - TUMT6 - 910mW (Ta) 150°C (TJ)
RF6L025BGTCR

RF6L025BGTCR

NCH 60V 2.5A, TUMT6, POWER MOSFE

Rohm Semiconductor

3,000 -
RF6L025BGTCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 91mOhm @ 2.5A, 10V Surface Mount 2.5V @ 1mA 3.1 nC @ 10 V 60 V ±20V 135 pF @ 30 V - - TUMT6 - 910mW (Ta) 150°C (TJ)
RSS120N03FU6TB

RSS120N03FU6TB

MOSFET N-CH 30V 12A 8SOP

Rohm Semiconductor

6,280 -
RSS120N03FU6TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4V, 10V 10mOhm @ 12A, 10V Surface Mount 2.5V @ 1mA 25 nC @ 5 V 30 V 20V 1360 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
QS5U34TR

QS5U34TR

MOSFET N-CH 20V 1.5A TSMT5

Rohm Semiconductor

2,940 -
QS5U34TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.8V, 4.5V 180mOhm @ 1.5A, 4.5V Surface Mount 1.3V @ 1mA 2.5 nC @ 4.5 V 20 V 10V 110 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C
RV7C040BCTCR1

RV7C040BCTCR1

PCH -20V -4A SMALL SIGNAL MOSFET

Rohm Semiconductor

3,000 -
RV7C040BCTCR1

数据表

- 3-XDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 63mOhm @ 4A, 4.5V Surface Mount 1.2V @ 1mA 6.5 nC @ 4.5 V 20 V ±8V 460 pF @ 10 V - - DFN1212-3 - 1.1W (Ta) 150°C (TJ)
RTQ020N05TR

RTQ020N05TR

MOSFET N-CH 45V 2A TSMT6

Rohm Semiconductor

1,940 -
RTQ020N05TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 2.5V, 4.5V 190mOhm @ 2A, 4.5V Surface Mount 1.5V @ 1mA 2.3 nC @ 4.5 V 45 V ±12V 150 pF @ 10 V - - TSMT6 (SC-95) - 600mW (Ta) 150°C (TJ)
RV7E040AJTCR1

RV7E040AJTCR1

NCH 30V 4A MIDDLE POWER MOSFET :

Rohm Semiconductor

3,000 -
RV7E040AJTCR1

数据表

- 3-XDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 4.5V 45mOhm @ 4A, 4.5V Surface Mount 1.5V @ 1mA 4 nC @ 4.5 V 30 V ±12V 450 pF @ 15 V - - DFN1212-3 - 1.1W (Ta) 150°C (TJ)
RV7L020GNTCR1

RV7L020GNTCR1

NCH 60V 2A MIDDLE POWER MOSFET :

Rohm Semiconductor

3,000 -
RV7L020GNTCR1

数据表

- 3-XDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 157mOhm @ 2A, 10V Surface Mount 2.7V @ 50µA 2.1 nC @ 10 V 60 V ±20V 110 pF @ 30 V - - DFN1212-3 - 1.1W (Ta) 150°C (TJ)
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