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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6524ENZC17

R6524ENZC17

MOSFET N-CH 650V 24A TO3

Rohm Semiconductor

300 -
R6524ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - TO-3PF - 74W (Tc) 150°C (TJ)
ZDS020N60TB

ZDS020N60TB

MOSFET N-CH 600V 630MA 8SOP

Rohm Semiconductor

5,408 -
ZDS020N60TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 630mA (Tc) 10V 5Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 20 nC @ 10 V 600 V ±30V 310 pF @ 10 V - - 8-SOP - 2W (Tc) 150°C (TJ)
RDD020N50TL

RDD020N50TL

MOSFET N-CH 500V 2A CPT3

Rohm Semiconductor

5,413 -
RDD020N50TL

数据表

* - Tape & Reel (TR) Last Time Buy - - - - - - - - - - - - - - - - -
RSJ650N10TL

RSJ650N10TL

MOSFET N-CH 100V 65A LPTS

Rohm Semiconductor

908 -
RSJ650N10TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta) 4V, 10V 9.1mOhm @ 32.5A, 10V Surface Mount 2.5V @ 1mA 260 nC @ 10 V 100 V ±20V 10780 pF @ 25 V - - LPTS - 100W (Tc) 150°C (TJ)
SCT4013DTW

SCT4013DTW

SiC FET Top Side Cooling

Rohm Semiconductor

3,523 -
SCT4013DTW

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6035VNX3C16

R6035VNX3C16

600V 35A TO-220AB, PRESTOMOS WIT

Rohm Semiconductor

555 -
R6035VNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V, 15V 114mOhm @ 8A, 15V Through Hole 6.5V @ 1.1mA 50 nC @ 10 V 600 V ±30V 2400 pF @ 100 V - - TO-220AB - 347W (Tc) 150°C (TJ)
RJ1L12BGNTLL

RJ1L12BGNTLL

NCH 60V 120A POWER MOSFET : RJ1L

Rohm Semiconductor

1,993 -
RJ1L12BGNTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 2.9mOhm @ 40A, 10V Surface Mount 2.5V @ 500µA 175 nC @ 10 V 60 V ±20V 9000 pF @ 30 V - - TO-263AB - 192W (Tc) 150°C (TJ)
R6535KNX3C16

R6535KNX3C16

650V 35A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor

1,000 -
R6535KNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 115mOhm @ 18.1A, 10V Through Hole 5V @ 1.3mA 72 nC @ 10 V 650 V ±20V 3000 pF @ 25 V - - TO-220AB - 370W (Tc) 150°C (TJ)
R6520KNZ4C13

R6520KNZ4C13

MOSFET N-CH 650V 20A TO247

Rohm Semiconductor

334 -
R6520KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - TO-247 - 231W (Tc) 150°C (TJ)
R6030KNZC17

R6030KNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300 -
R6030KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-3PF - 86W (Tc) 150°C (TJ)
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