ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SCT3105KW7TL SICFET N-CH 1200V 23A TO263-7 Rohm Semiconductor	995	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	23A (Tc)	-	137mOhm @ 7.6A, 18V	Surface Mount	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	-	-	TO-263-7	-	125W	175°C (TJ)
RW1C020UNT2R MOSFET N-CH 20V 2A 6WEMT Rohm Semiconductor	5,277	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	1.5V, 4.5V	105mOhm @ 2A, 4.5V	Surface Mount	1V @ 1mA	2 nC @ 4.5 V	20 V	±10V	180 pF @ 10 V	-	-	6-WEMT	-	400mW (Ta)	150°C (TJ)
R6030JNZ4C13 MOSFET N-CH 600V 30A TO247G Rohm Semiconductor	391	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	15V	143mOhm @ 15A, 15V	Through Hole	7V @ 5.5mA	74 nC @ 15 V	600 V	±30V	2500 pF @ 100 V	-	-	TO-247G	-	370W (Tc)	-55°C ~ 150°C (TJ)
SCT4045DW7TL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	424	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tj)	18V	59mOhm @ 17A, 18V	Surface Mount	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	1460 pF @ 500 V	-	-	TO-263-7L	-	93W	175°C (TJ)
SCT3160KW7TL SICFET N-CH 1200V 17A TO263-7 Rohm Semiconductor	3,872	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	-	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	-	-	TO-263-7	-	100W	175°C (TJ)
RSQ015N06TR MOSFET N-CH 60V 1.5A TSMT6 Rohm Semiconductor	1	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	4V, 10V	290mOhm @ 1.5A, 10V	Surface Mount	2.5V @ 1mA	2 nC @ 5 V	60 V	±20V	110 pF @ 10 V	-	-	TSMT6 (SC-95)	-	950mW (Ta)	150°C (TJ)
SCT4062KW7TL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	904	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tj)	18V	81mOhm @ 12A, 18V	Surface Mount	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	-	-	TO-263-7L	-	93W	175°C (TJ)
SCT4045DW7HRTL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	989	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	18V	59mOhm @ 17A, 18V	Surface Mount	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	1460 pF @ 500 V	AEC-Q101	-	TO-263-7L	Automotive	93W	175°C (TJ)
SCT3060AW7TL SICFET N-CH 650V 38A TO263-7 Rohm Semiconductor	1,175	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	-	78mOhm @ 13A, 18V	Surface Mount	5.6V @ 6.67mA	58 nC @ 18 V	650 V	+22V, -4V	852 pF @ 500 V	-	-	TO-263-7	-	159W	175°C (TJ)
SCT4045DRHRC15 750V, 34A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	492	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	18V	59mOhm @ 17A, 18V	Through Hole	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	1460 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	115W	175°C (TJ)

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