ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SCT3105KLHRC11 SICFET N-CH 1200V 24A TO247N Rohm Semiconductor	241	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tc)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	134W	175°C (TJ)
SCT4062KRHRC15 1200V, 26A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	401	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	26A (Tc)	18V	81mOhm @ 12A, 18V	Through Hole	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	115W	175°C (TJ)
SCT3080AW7TL SICFET N-CH 650V 29A TO263-7 Rohm Semiconductor	905	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	-	104mOhm @ 10A, 18V	Surface Mount	5.6V @ 5mA	48 nC @ 18 V	650 V	+22V, -4V	571 pF @ 500 V	-	-	TO-263-7	-	125W	175°C (TJ)
SCT2280KEHRC11 1200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor	410	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	14A (Tc)	18V	364mOhm @ 4A, 18V	Through Hole	4V @ 1.4mA	36 nC @ 400 V	1200 V	+22V, -6V	667 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	108W (Tc)	175°C (TJ)
R6050JNZ4C13 MOSFET N-CH 600V 50A TO247G Rohm Semiconductor	531	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	15V	83mOhm @ 25A, 15V	Through Hole	7V @ 5mA	120 nC @ 15 V	600 V	±30V	4500 pF @ 100 V	-	-	TO-247G	-	615W (Tc)	150°C (TJ)
SCT3080ALHRC11 SICFET N-CH 650V 30A TO247N Rohm Semiconductor	448	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	18V	104mOhm @ 10A, 18V	Through Hole	5.6V @ 5mA	48 nC @ 18 V	650 V	+22V, -4V	571 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	134W	175°C (TJ)
R6077VNZ4C13 600V 77A TO-247, PRESTOMOS WITH Rohm Semiconductor	1,148	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V, 15V	51mOhm @ 23A, 15V	Through Hole	6.5V @ 1.9mA	108 nC @ 10 V	600 V	±30V	5200 pF @ 100 V	-	-	TO-247	-	781W (Tc)	150°C (TJ)
SCT4045DEC11 750V, 45M, 3-PIN THD, TRENCH-STR Rohm Semiconductor	4,201	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	18V	59mOhm @ 17A, 18V	Through Hole	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	14600 pF @ 500 V	-	-	TO-247N	-	115W	175°C (TJ)
R6076ENZ4C13 MOSFET N-CH 600V 76A TO247 Rohm Semiconductor	463	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	42mOhm @ 44.4A, 10V	Through Hole	4V @ 1mA	260 nC @ 10 V	600 V	±20V	6500 pF @ 25 V	-	-	TO-247	-	735W (Tc)	150°C (TJ)
R6576ENZ4C13 650V 76A TO-247, LOW-NOISE POWER Rohm Semiconductor	548	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Ta)	10V	46mOhm @ 44.4A, 10V	Through Hole	4V @ 2.96mA	260 nC @ 10 V	650 V	±20V	6500 pF @ 25 V	-	-	TO-247	-	735W (Tc)	150°C (TJ)

共 1014 条记录«上一页 1... 14 15 16 171819 20 21...102 下一页»