ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 20

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RSD131P10TL MOSFET P-CH 100V 13A CPT3 Rohm Semiconductor	4,397	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	4V, 10V	200mOhm @ 6.5A, 10V	Surface Mount	2.5V @ 1mA	40 nC @ 10 V	100 V	±20V	2400 pF @ 25 V	-	-	CPT3	-	850mW (Ta), 20W (Tc)	150°C (TJ)
SCT3060ALHRC11 SICFET N-CH 650V 39A TO247N Rohm Semiconductor	440	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	39A (Tc)	18V	78mOhm @ 13A, 18V	Through Hole	5.6V @ 6.67mA	58 nC @ 18 V	650 V	+22V, -4V	852 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	165W	175°C (TJ)
SCT2080KEHRC11 SICFET N-CH 1200V 40A TO247N Rohm Semiconductor	16,500	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	117mOhm @ 10A, 18V	Through Hole	4V @ 4.4mA	106 nC @ 18 V	1200 V	+22V, -6V	2080 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	-	175°C (TJ)
SCT3030AW7TL SICFET N-CH 650V 70A TO263-7 Rohm Semiconductor	432	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	70A (Tc)	-	39mOhm @ 27A, 18V	Surface Mount	5.6V @ 13.3mA	104 nC @ 18 V	650 V	+22V, -4V	1526 pF @ 500 V	-	-	TO-263-7	-	267W	175°C (TJ)
SCT3040KW7TL SICFET N-CH 1200V 56A TO263-7 Rohm Semiconductor	986	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	-	52mOhm @ 20A, 18V	Surface Mount	5.6V @ 10mA	107 nC @ 18 V	1200 V	+22V, -4V	1337 pF @ 800 V	-	-	TO-263-7	-	267W	175°C (TJ)
SCT3030ALHRC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	445	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	70A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	104 nC @ 18 V	650 V	+22V, -4V	1526 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	262W	175°C (TJ)
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	849	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tc)	18V	52mOhm @ 20A, 18V	Through Hole	5.6V @ 10mA	107 nC @ 18 V	1200 V	+22V, -4V	1337 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	262W	175°C (TJ)
SCT3022ALHRC11 SICFET N-CH 650V 93A TO247N Rohm Semiconductor	2,246	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	93A (Tc)	18V	28.6mOhm @ 36A, 18V	Through Hole	5.6V @ 18.2mA	133 nC @ 18 V	650 V	+22V, -4V	2208 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	339W	175°C (TJ)
SCT3030KLHRC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	580	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	72A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	131 nC @ 18 V	1200 V	+22V, -4V	2222 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	339W	175°C (TJ)
SCT3017ALGC11 650V, 118A, THD, TRENCH-STRUCTUR Rohm Semiconductor	435	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	118A (Tc)	18V	22.1mOhm @ 47A, 18V	Through Hole	5.6V @ 23.5mA	172 nC @ 18 V	650 V	+22V, -4V	2884 pF @ 500 V	-	-	TO-247N	-	427W	175°C (TJ)

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