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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK0362DSP-WS#J0

RJK0362DSP-WS#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

1,830 -
RJK0362DSP-WS#J0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP75N04YLG-E1-AY

NP75N04YLG-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

2,929 -
NP75N04YLG-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 4.8mOhm @ 38A, 10V Surface Mount 2.5V @ 250µA 116 nC @ 10 V 40 V ±20V 6450 pF @ 25 V - - 8-HSON (5x5.4) - 138W (Ta) 175°C
2SJ166(1)-T1B-A

2SJ166(1)-T1B-A

P-CHANNEL, MOSFET

Renesas Electronics Corporation

32,196 -
2SJ166(1)-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03M6DNS-00#J5

RJK03M6DNS-00#J5

MOSFET N-CH 30V 16A 8HWSON

Renesas Electronics Corporation

25,000 -
RJK03M6DNS-00#J5

数据表

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) - 9.2mOhm @ 8A, 10V Surface Mount - 7.1 nC @ 4.5 V 30 V - 1190 pF @ 10 V - - 8-HWSON (3.3x3.3) - 12.5W (Tc) 150°C (TJ)
RJK0366DSP-00#J0

RJK0366DSP-00#J0

MOSFET N-CH 30V 11A 8SOP

Renesas Electronics Corporation

22,500 -
RJK0366DSP-00#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) - 11.7mOhm @ 5.5A, 10V Surface Mount - 6.8 nC @ 4.5 V 30 V - 1010 pF @ 10 V - - 8-SOP - - -
2SK3105-T1B-A

2SK3105-T1B-A

SMALL SIGNAL FET

Renesas Electronics Corporation

3,000 -
2SK3105-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP36P06KDG-E1-AY

NP36P06KDG-E1-AY

MOSFET P-CH 60V 36A TO263

Renesas Electronics Corporation

2,712 -
NP36P06KDG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 29.5mOhm @ 18A, 10V Surface Mount 2.5V @ 1mA 54 nC @ 10 V 60 V ±20V 3100 pF @ 10 V - - TO-263 - 1.8W (Ta), 56W (Tc) 175°C (TJ)
2SK1587-T1-AZ

2SK1587-T1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,000 -
2SK1587-T1-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0456DPB-00#J5

RJK0456DPB-00#J5

MOSFET N-CH 40V 50A LFPAK

Renesas Electronics Corporation

2,500 -
RJK0456DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta) 10V 3.2mOhm @ 25A, 10V Surface Mount - 39 nC @ 10 V 40 V ±20V 3000 pF @ 10 V - - LFPAK - 65W (Tc) 150°C (TJ)
RJK0656DPB-00#J5

RJK0656DPB-00#J5

MOSFET N-CH 60V 40A LFPAK

Renesas Electronics Corporation

2,492 -
RJK0656DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 5.6mOhm @ 20A, 10V Surface Mount - 40 nC @ 10 V 60 V ±20V 3000 pF @ 10 V - - LFPAK - 65W (Tc) 150°C (TJ)
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