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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SJ205-T1-AZP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
25,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA653TT-E1-AMOSFET P-CH 30V 2.5A 6WSOF Renesas Electronics Corporation |
12,000 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | - | 165mOhm @ 1.5A, 10V | Surface Mount | 2.5V @ 1mA | 3.4 nC @ 10 V | 30 V | - | 175 pF @ 10 V | - | - | 6-WSOF | - | - | - |
|
|
2SJ196-T-AZP-CHANNEL SMALL SIGNAL MOSFET Renesas Electronics Corporation |
5,502 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03M9DNS-00#J5MOSFET N-CH 30V 14A 8HWSON Renesas Electronics Corporation |
1,775,000 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | - | 11.1mOhm @ 7A, 10V | Surface Mount | - | 6 nC @ 4.5 V | 30 V | - | 980 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 10W (Tc) | 150°C (TJ) |
|
RJK03J5DNS-00#J5N-CHANNEL POWER SWITCHING MOSFET Renesas Electronics Corporation |
100,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK03J6DPA-00#J5AN-CHANNEL POWER SWITCHING MOSFET Renesas Electronics Corporation |
42,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2463T1Q-E1-AXMOSFET N-CH 20V 6A 8HUSON Renesas Electronics Corporation |
24,000 | - |
|
数据表 |
- | 8-WFDFN Exposed Pad | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | - | 20mOhm @ 3A, 10V | Surface Mount | - | 7 nC @ 4 V | 20 V | - | 680 pF @ 10 V | - | - | 8-HUSON (2.7x2) | - | 1W (Ta) | 150°C (TJ) |
|
2SK2980ZZ-TL-ESMALL SIGNAL N-CHANNEL MOSFET Renesas Electronics Corporation |
14,212 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SJ673-AZMOSFET P-CH 60V 36A TO220 Renesas Electronics Corporation |
6,424 | - |
|
数据表 |
- | TO-220-3 Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4V, 10V | 20mOhm @ 18A, 10V | Through Hole | - | 87 nC @ 10 V | 60 V | ±20V | 4600 pF @ 10 V | - | - | TO-220 Isolated Tab | - | 2W (Ta), 32W (Tc) | 150°C (TJ) |
|
|
N0604N-S19-AYMOSFET N-CH 60V 82A TO220 Renesas Electronics Corporation |
3,956 | - |
|
数据表 |
- | TO-220-3 Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 82A (Tc) | 10V | 6.5mOhm @ 41A, 10V | Through Hole | - | 75 nC @ 10 V | 60 V | ±20V | 4150 pF @ 25 V | - | - | TO-220 Isolated Tab | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) |
