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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NP40N10VDF-E1-AYMOSFET N-CH 100V 40A TO252 Renesas Electronics Corporation |
1,559 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | - | 26mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 71 nC @ 10 V | 100 V | ±20V | 3150 pF @ 25 V | - | - | TO-252 (MP-3ZP) | - | 1.2W (Ta), 120W (Tc) | 175°C |
|
|
RQA0005AQS#H1RQA0005 - N-CHANNEL POWER MOSFET Renesas |
5,436 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK1028DSP-00#J5N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
7,350 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK0353DSP-WS#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,685 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0397DPA-0G#J7APOWER TRANSISTOR, MOSFET Renesas Electronics Corporation |
4,993,700 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK03E0DNS-02#J5N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
490,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK03P5DPA-00#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
213,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03B7DPA-00#J5AMOSFET N-CH 30V 30A 8WPAK Renesas Electronics Corporation |
191,615 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | - | 7.8mOhm @ 15A, 10V | Surface Mount | - | 11 nC @ 4.5 V | 30 V | - | 1670 pF @ 10 V | - | - | 8-WPAK | - | 30W (Tc) | 150°C (TJ) |
|
2SJ557-T1B-ASMALL SIGNAL P-CHANNEL MOSFET Renesas Electronics Corporation |
177,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK03B8DPA-00#J53MOSFET N-CH 30V 30A 8WPAK Renesas Electronics Corporation |
114,786 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | - | 9.3mOhm @ 15A, 10V | Surface Mount | - | 9 nC @ 4.5 V | 30 V | - | 1330 pF @ 10 V | - | - | 8-WPAK | - | 28W (Tc) | - |
