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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK03M9DNS-WS#J5

RJK03M9DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,572 -
RJK03M9DNS-WS#J5

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP60N04VDK-E1-AY

NP60N04VDK-E1-AY

POWER TRS2

Renesas Electronics Corporation

4,426 -
NP60N04VDK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 3.85mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 63 nC @ 10 V 40 V ±20V 3680 pF @ 25 V AEC-Q101 - TO-252 (MP-3ZP) Automotive 1.2W (Ta), 105W (Tc) 175°C
2SJ207-AZ

2SJ207-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

2,657 -
2SJ207-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP35N04YLG-E1-AY

NP35N04YLG-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

4,855 -
NP35N04YLG-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 5V, 10V 9.7mOhm @ 17.5A, 10V Surface Mount 2.5V @ 250µA 51 nC @ 10 V 40 V ±20V 2850 pF @ 25 V - - 8-HSON (5x5.4) - 1W (Ta), 77W (Tc) 175°C
RJK0305DPB-02#J0

RJK0305DPB-02#J0

MOSFET N-CH 30V 30A LFPAK

Renesas Electronics Corporation

2,377 -
RJK0305DPB-02#J0

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 8mOhm @ 15A, 10V Surface Mount - 8 nC @ 4.5 V 30 V +16V, -12V 1250 pF @ 10 V - - LFPAK - - -
NP36P04SDG-E1-AY

NP36P04SDG-E1-AY

MOSFET P-CH 40V 36A TO252

Renesas Electronics Corporation

10,690 -
NP36P04SDG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 17mOhm @ 18A, 10V Surface Mount 2.5V @ 250µA 55 nC @ 10 V 40 V ±20V 2800 pF @ 10 V - - TO-252 (MP-3ZK) - 1.2W (Ta), 56W (Tc) 175°C (TJ)
RJK0349DSP-01#J0

RJK0349DSP-01#J0

MOSFET N-CH 30V 20A 8SOP

Renesas Electronics Corporation

5,000 -
RJK0349DSP-01#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 3.8mOhm @ 10A, 10V Surface Mount - 25 nC @ 4.5 V 30 V ±20V 3850 pF @ 10 V - - 8-SOP - 2.5W (Ta) 150°C (TJ)
2SJ601-ZK-E1-AZ

2SJ601-ZK-E1-AZ

MP-3ZK

Renesas Electronics Corporation

3,832 -
2SJ601-ZK-E1-AZ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 4V, 10V 31mOhm @ 18A, 10V Surface Mount 2.5V @ 1mA 63 nC @ 10 V 60 V ±20V 3300 pF @ 10 V - - TO-252 (MP-3ZK) - 1W (Ta), 65W (Tc) 150°C
RJK0851DPB-00#J5

RJK0851DPB-00#J5

MOSFET N-CH 80V 20A LFPAK

Renesas Electronics Corporation

4,272 -
RJK0851DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 23mOhm @ 10A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 4.5 V 80 V ±20V 2050 pF @ 10 V - - LFPAK - 45W (Tc) 150°C (TJ)
HAT1142R02-EL-E

HAT1142R02-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,500 -
HAT1142R02-EL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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